Analysis of self heating effect(She) according to buried oxide thickness in soi nanowire fet

Ilho Myeong; Dokyun Son; Hyun Suk Kim; Myounggon Kang; Hyungcheol Shin

doi:10.5573/JSTS.2017.17.4.685

Analysis of self heating effect(She) according to buried oxide thickness in soi nanowire fet

Ilho Myeong, Dokyun Son, Hyun Suk Kim, Myounggon Kang, Hyungcheol Shin

School of Advanced Fusion Studies

Seoul National University

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, the Self Heating Effect (SHE) is investigated in silicon on insulator (SOI) nanowire MOSFETs. A comprehensive study of SHE in Nanowire FET (NWFET) was implemented by Technology Computer-Aided Design (TCAD) simulation. Through analysis of on-current (I_on), thermal resistance (R_TH), and heat flux, the DC characteristics of SHE were investigated according to the increase of buried oxide thickness (T_box). The results indicate that leakage current is not changed according to T_box so that it is not necessary to increase T_box. In conclusion, in case that T_box was optimized by 1 nm, temperature and R_TH were reduced by 152 K and 54.5% respectively. Also, I_on was increased by 5.84% maintaining leakage current compared with T_box of 20 nm.

Original language	English
Pages (from-to)	685-690
Number of pages	6
Journal	Journal of Semiconductor Technology and Science
Volume	17
Issue number	5
DOIs	https://doi.org/10.5573/JSTS.2017.17.4.685
State	Published - Oct 2017

Keywords

Heat flux
Nanowire FET (NWFET)
Self heating effect (SHE)
Thermal resistance (R)

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10.5573/JSTS.2017.17.4.685

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@article{07453710bb83494882ab05891560ca33,

title = "Analysis of self heating effect(She) according to buried oxide thickness in soi nanowire fet",

abstract = "In this paper, the Self Heating Effect (SHE) is investigated in silicon on insulator (SOI) nanowire MOSFETs. A comprehensive study of SHE in Nanowire FET (NWFET) was implemented by Technology Computer-Aided Design (TCAD) simulation. Through analysis of on-current (Ion), thermal resistance (RTH), and heat flux, the DC characteristics of SHE were investigated according to the increase of buried oxide thickness (Tbox). The results indicate that leakage current is not changed according to Tbox so that it is not necessary to increase Tbox. In conclusion, in case that Tbox was optimized by 1 nm, temperature and RTH were reduced by 152 K and 54.5% respectively. Also, Ion was increased by 5.84% maintaining leakage current compared with Tbox of 20 nm.",

keywords = "Heat flux, Nanowire FET (NWFET), Self heating effect (SHE), Thermal resistance (R)",

author = "Ilho Myeong and Dokyun Son and Kim, {Hyun Suk} and Myounggon Kang and Hyungcheol Shin",

year = "2017",

month = oct,

doi = "10.5573/JSTS.2017.17.4.685",

language = "English",

volume = "17",

pages = "685--690",

journal = "Journal of Semiconductor Technology and Science",

issn = "1598-1657",

publisher = "Institute of Electronics Engineers of Korea",

number = "5",

}

TY - JOUR

T1 - Analysis of self heating effect(She) according to buried oxide thickness in soi nanowire fet

AU - Myeong, Ilho

AU - Son, Dokyun

AU - Kim, Hyun Suk

AU - Kang, Myounggon

AU - Shin, Hyungcheol

PY - 2017/10

Y1 - 2017/10

N2 - In this paper, the Self Heating Effect (SHE) is investigated in silicon on insulator (SOI) nanowire MOSFETs. A comprehensive study of SHE in Nanowire FET (NWFET) was implemented by Technology Computer-Aided Design (TCAD) simulation. Through analysis of on-current (Ion), thermal resistance (RTH), and heat flux, the DC characteristics of SHE were investigated according to the increase of buried oxide thickness (Tbox). The results indicate that leakage current is not changed according to Tbox so that it is not necessary to increase Tbox. In conclusion, in case that Tbox was optimized by 1 nm, temperature and RTH were reduced by 152 K and 54.5% respectively. Also, Ion was increased by 5.84% maintaining leakage current compared with Tbox of 20 nm.

AB - In this paper, the Self Heating Effect (SHE) is investigated in silicon on insulator (SOI) nanowire MOSFETs. A comprehensive study of SHE in Nanowire FET (NWFET) was implemented by Technology Computer-Aided Design (TCAD) simulation. Through analysis of on-current (Ion), thermal resistance (RTH), and heat flux, the DC characteristics of SHE were investigated according to the increase of buried oxide thickness (Tbox). The results indicate that leakage current is not changed according to Tbox so that it is not necessary to increase Tbox. In conclusion, in case that Tbox was optimized by 1 nm, temperature and RTH were reduced by 152 K and 54.5% respectively. Also, Ion was increased by 5.84% maintaining leakage current compared with Tbox of 20 nm.

KW - Heat flux

KW - Nanowire FET (NWFET)

KW - Self heating effect (SHE)

KW - Thermal resistance (R)

UR - http://www.scopus.com/inward/record.url?scp=85032822148&partnerID=8YFLogxK

U2 - 10.5573/JSTS.2017.17.4.685

DO - 10.5573/JSTS.2017.17.4.685

M3 - Article

AN - SCOPUS:85032822148

SN - 1598-1657

VL - 17

SP - 685

EP - 690

JO - Journal of Semiconductor Technology and Science

JF - Journal of Semiconductor Technology and Science

IS - 5

ER -

Analysis of self heating effect(She) according to buried oxide thickness in soi nanowire fet

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