TY - JOUR
T1 - Analysis of the electrical characteristics and structure of Cu-Filled TSV with thermal shock test
AU - Jeong, Il Ho
AU - Roh, Myong Hoon
AU - Jung, Flora
AU - Song, Wan Ho
AU - Mayer, Michael
AU - Jung, Jae Pil
PY - 2014/5
Y1 - 2014/5
N2 - The electrical characteristics and failure of a Through-Silicon Via (TSV) were investigated using a thermal shock test. The electrical characteristics, such as resistance (R), self-inductance (Ls), self-capacitance (Cs), and mutual capacitance (Cm), were extracted using a T-equivalent circuit. A cross section of the Cu-filled via was observed by field emission-scanning electron microscopy and the electrical characteristics were measured using a commercial Agilent E4980A LCR Meter. The experimental results revealed R, Ls, Cs, and Cm values of 3.2 mΩ, 29.3 pH, 12 fF, and 0.42 pF, respectively. Cm occurred between the charge-holding TSVs, which changed from 0.42 pF to 0.26 pF due to a permittivity transition of the Cu ion drift. After 1,000 cycles of a thermal shock test, cracks were observed between the opening and around the side of the TSV and Si wafer due to mismatch of the coefficient of thermal expansion between the Cu-plug and Si substrate.
AB - The electrical characteristics and failure of a Through-Silicon Via (TSV) were investigated using a thermal shock test. The electrical characteristics, such as resistance (R), self-inductance (Ls), self-capacitance (Cs), and mutual capacitance (Cm), were extracted using a T-equivalent circuit. A cross section of the Cu-filled via was observed by field emission-scanning electron microscopy and the electrical characteristics were measured using a commercial Agilent E4980A LCR Meter. The experimental results revealed R, Ls, Cs, and Cm values of 3.2 mΩ, 29.3 pH, 12 fF, and 0.42 pF, respectively. Cm occurred between the charge-holding TSVs, which changed from 0.42 pF to 0.26 pF due to a permittivity transition of the Cu ion drift. After 1,000 cycles of a thermal shock test, cracks were observed between the opening and around the side of the TSV and Si wafer due to mismatch of the coefficient of thermal expansion between the Cu-plug and Si substrate.
KW - TSV
KW - crack
KW - electrical analysis
KW - thermal shock test
UR - http://www.scopus.com/inward/record.url?scp=84900010997&partnerID=8YFLogxK
U2 - 10.1007/s13391-013-3260-6
DO - 10.1007/s13391-013-3260-6
M3 - Article
AN - SCOPUS:84900010997
SN - 1738-8090
VL - 10
SP - 649
EP - 653
JO - Electronic Materials Letters
JF - Electronic Materials Letters
IS - 3
ER -