Analysis of threshold voltage shift for full vgs /vds /oxygen-content span under positive bias stress in bottom-gate amorphous ingazno thin-film transistors
- Je Hyuk Kim
- , Jun Tae Jang
- , Jong Ho Bae
- , Sung Jin Choi
- , Dong Myong Kim
- , Changwook Kim
- , Yoon Kim
- , Dae Hwan Kim
- Kookmin University
Research output: Contribution to journal › Article › peer-review
23
Scopus
citations