Analysis of two divided component of NBTI framework using TCAD simulation

Shinkeun Kim; Youngsoo Seo; Dokyun Son; Myounggon Kang; Hyungcheol Shin

doi:10.23919/SNW.2017.8242311

Analysis of two divided component of NBTI framework using TCAD simulation

Shinkeun Kim, Youngsoo Seo, Dokyun Son, Myounggon Kang, Hyungcheol Shin

School of Advanced Fusion Studies

Seoul National University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, the two Negative Bias Temperature Instability (NBTI) framework components are divided with interface trap generation (ΔV_IT) and hole trapping in pre-existing defects (ΔV_HT). The threshold voltage shift (ΔV_T) contribution is verified by two divided components and studied independently. The impact of inter layer (IL) thickness is simulated under NBTI stress using technology computer-aided design (TCAD) software.

Original language	English
Title of host publication	2017 Silicon Nanoelectronics Workshop, SNW 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	89-90
Number of pages	2
ISBN (Electronic)	9784863486478
DOIs	https://doi.org/10.23919/SNW.2017.8242311
State	Published - 29 Dec 2017
Event	22nd Silicon Nanoelectronics Workshop, SNW 2017 - Kyoto, Japan Duration: 4 Jun 2017 → 5 Jun 2017

Publication series

Name	2017 Silicon Nanoelectronics Workshop, SNW 2017
Volume	2017-January

Conference

Conference	22nd Silicon Nanoelectronics Workshop, SNW 2017
Country/Territory	Japan
City	Kyoto
Period	4/06/17 → 5/06/17

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10.23919/SNW.2017.8242311

Cite this

Kim, S., Seo, Y., Son, D., Kang, M., & Shin, H. (2017). Analysis of two divided component of NBTI framework using TCAD simulation. In 2017 Silicon Nanoelectronics Workshop, SNW 2017 (pp. 89-90). Article 8242311 (2017 Silicon Nanoelectronics Workshop, SNW 2017; Vol. 2017-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/SNW.2017.8242311

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title = "Analysis of two divided component of NBTI framework using TCAD simulation",

abstract = "In this paper, the two Negative Bias Temperature Instability (NBTI) framework components are divided with interface trap generation (ΔVIT) and hole trapping in pre-existing defects (ΔVHT). The threshold voltage shift (ΔVT) contribution is verified by two divided components and studied independently. The impact of inter layer (IL) thickness is simulated under NBTI stress using technology computer-aided design (TCAD) software.",

author = "Shinkeun Kim and Youngsoo Seo and Dokyun Son and Myounggon Kang and Hyungcheol Shin",

note = "Publisher Copyright: {\textcopyright} 2017 JSAP.; 22nd Silicon Nanoelectronics Workshop, SNW 2017 ; Conference date: 04-06-2017 Through 05-06-2017",

year = "2017",

month = dec,

day = "29",

doi = "10.23919/SNW.2017.8242311",

language = "English",

series = "2017 Silicon Nanoelectronics Workshop, SNW 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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booktitle = "2017 Silicon Nanoelectronics Workshop, SNW 2017",

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Kim, S, Seo, Y, Son, D, Kang, M & Shin, H 2017, Analysis of two divided component of NBTI framework using TCAD simulation. in 2017 Silicon Nanoelectronics Workshop, SNW 2017., 8242311, 2017 Silicon Nanoelectronics Workshop, SNW 2017, vol. 2017-January, Institute of Electrical and Electronics Engineers Inc., pp. 89-90, 22nd Silicon Nanoelectronics Workshop, SNW 2017, Kyoto, Japan, 4/06/17. https://doi.org/10.23919/SNW.2017.8242311

Analysis of two divided component of NBTI framework using TCAD simulation. / Kim, Shinkeun; Seo, Youngsoo; Son, Dokyun et al.
2017 Silicon Nanoelectronics Workshop, SNW 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 89-90 8242311 (2017 Silicon Nanoelectronics Workshop, SNW 2017; Vol. 2017-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Analysis of two divided component of NBTI framework using TCAD simulation

AU - Kim, Shinkeun

AU - Seo, Youngsoo

AU - Son, Dokyun

AU - Kang, Myounggon

AU - Shin, Hyungcheol

PY - 2017/12/29

Y1 - 2017/12/29

N2 - In this paper, the two Negative Bias Temperature Instability (NBTI) framework components are divided with interface trap generation (ΔVIT) and hole trapping in pre-existing defects (ΔVHT). The threshold voltage shift (ΔVT) contribution is verified by two divided components and studied independently. The impact of inter layer (IL) thickness is simulated under NBTI stress using technology computer-aided design (TCAD) software.

AB - In this paper, the two Negative Bias Temperature Instability (NBTI) framework components are divided with interface trap generation (ΔVIT) and hole trapping in pre-existing defects (ΔVHT). The threshold voltage shift (ΔVT) contribution is verified by two divided components and studied independently. The impact of inter layer (IL) thickness is simulated under NBTI stress using technology computer-aided design (TCAD) software.

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M3 - Conference contribution

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T3 - 2017 Silicon Nanoelectronics Workshop, SNW 2017

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BT - 2017 Silicon Nanoelectronics Workshop, SNW 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 22nd Silicon Nanoelectronics Workshop, SNW 2017

Y2 - 4 June 2017 through 5 June 2017

ER -

Analysis of two divided component of NBTI framework using TCAD simulation

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