Analysis on DC and AC characteristics of self heating effect in nanowire

Hyunsuk Kim; Youngsoo Seo; Il Ho Myong; Myounggon Kang; Hyungcheol Shin

doi:10.1166/jnn.2017.14030

Analysis on DC and AC characteristics of self heating effect in nanowire

Hyunsuk Kim
, Youngsoo Seo
, Il Ho Myong
, Myounggon Kang
, Hyungcheol Shin

School of Advanced Fusion Studies

Seoul National University

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

As devices are scaling down aggressively, three-dimensional field-effect transistors (FETs) becomes one of essential factors to obtain high gate controllability in order to reduce leakage current. However, insulators surrounding channel for above the reason block heat emission so that the lattice temperature can increase to the critical levels for devices. This phenomenon, called Self Heating Effect (SHE), can deteriorate device performance significantly. From this point of view, overall study on SHE in 5 nm node Nanowire FET (NWFET) was implemented by simulation. Through analysis on on-current (I_on), thermal resistance (R_th), transient characteristics, the DC and AC characteristics were investigated.

Original language	English
Pages (from-to)	3056-3059
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	17
Issue number	5
DOIs	https://doi.org/10.1166/jnn.2017.14030
State	Published - 2017

Keywords

Nanowire FET (NWFET)
Self Heating Effect (SHE)
Thermal Resistance (R)

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10.1166/jnn.2017.14030

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title = "Analysis on DC and AC characteristics of self heating effect in nanowire",

abstract = "As devices are scaling down aggressively, three-dimensional field-effect transistors (FETs) becomes one of essential factors to obtain high gate controllability in order to reduce leakage current. However, insulators surrounding channel for above the reason block heat emission so that the lattice temperature can increase to the critical levels for devices. This phenomenon, called Self Heating Effect (SHE), can deteriorate device performance significantly. From this point of view, overall study on SHE in 5 nm node Nanowire FET (NWFET) was implemented by simulation. Through analysis on on-current (Ion), thermal resistance (Rth), transient characteristics, the DC and AC characteristics were investigated.",

keywords = "Nanowire FET (NWFET), Self Heating Effect (SHE), Thermal Resistance (R)",

author = "Hyunsuk Kim and Youngsoo Seo and Myong, \{Il Ho\} and Myounggon Kang and Hyungcheol Shin",

year = "2017",

doi = "10.1166/jnn.2017.14030",

language = "English",

volume = "17",

pages = "3056--3059",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

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T1 - Analysis on DC and AC characteristics of self heating effect in nanowire

AU - Kim, Hyunsuk

AU - Seo, Youngsoo

AU - Myong, Il Ho

AU - Kang, Myounggon

AU - Shin, Hyungcheol

PY - 2017

Y1 - 2017

N2 - As devices are scaling down aggressively, three-dimensional field-effect transistors (FETs) becomes one of essential factors to obtain high gate controllability in order to reduce leakage current. However, insulators surrounding channel for above the reason block heat emission so that the lattice temperature can increase to the critical levels for devices. This phenomenon, called Self Heating Effect (SHE), can deteriorate device performance significantly. From this point of view, overall study on SHE in 5 nm node Nanowire FET (NWFET) was implemented by simulation. Through analysis on on-current (Ion), thermal resistance (Rth), transient characteristics, the DC and AC characteristics were investigated.

AB - As devices are scaling down aggressively, three-dimensional field-effect transistors (FETs) becomes one of essential factors to obtain high gate controllability in order to reduce leakage current. However, insulators surrounding channel for above the reason block heat emission so that the lattice temperature can increase to the critical levels for devices. This phenomenon, called Self Heating Effect (SHE), can deteriorate device performance significantly. From this point of view, overall study on SHE in 5 nm node Nanowire FET (NWFET) was implemented by simulation. Through analysis on on-current (Ion), thermal resistance (Rth), transient characteristics, the DC and AC characteristics were investigated.

KW - Nanowire FET (NWFET)

KW - Self Heating Effect (SHE)

KW - Thermal Resistance (R)

UR - https://www.scopus.com/pages/publications/85015400729

U2 - 10.1166/jnn.2017.14030

DO - 10.1166/jnn.2017.14030

M3 - Article

AN - SCOPUS:85015400729

SN - 1533-4880

VL - 17

SP - 3056

EP - 3059

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 5

ER -

Analysis on DC and AC characteristics of self heating effect in nanowire

Abstract

Keywords

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