Analysis on self heating effects in nanowire FET considering effective thermal conductivity of BEOL

Hyunsuk Kim; Dokyun Son; Ilho Myoung; Myounggon Kang; Hyungcheol Shin

doi:10.23919/SNW.2017.8242287

Analysis on self heating effects in nanowire FET considering effective thermal conductivity of BEOL

Hyunsuk Kim, Dokyun Son, Ilho Myoung, Myounggon Kang, Hyungcheol Shin

School of Advanced Fusion Studies

Seoul National University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Accurate evaluation of Self Heating Effects in highly down-scaled devices becomes essential for improved performance and reliability. However, complex structure of BEOL causes analysis of SHEs to be difficult To remove the difficulty, based on Rent's rule to obtain interconnect density function, effective thermal conductivity of BEOL versus metal volume density and average aspect ratio (p) was calculated. With results above, TCAD simulation for SHEs was performed in 5 nm node nanowire FET. As a result, lowered thermal conductivity by complicated structure can bring underestimated SHEs through simulation.

Original language	English
Title of host publication	2017 Silicon Nanoelectronics Workshop, SNW 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	41-42
Number of pages	2
ISBN (Electronic)	9784863486478
DOIs	https://doi.org/10.23919/SNW.2017.8242287
State	Published - 29 Dec 2017
Event	22nd Silicon Nanoelectronics Workshop, SNW 2017 - Kyoto, Japan Duration: 4 Jun 2017 → 5 Jun 2017

Publication series

Name	2017 Silicon Nanoelectronics Workshop, SNW 2017
Volume	2017-January

Conference

Conference	22nd Silicon Nanoelectronics Workshop, SNW 2017
Country/Territory	Japan
City	Kyoto
Period	4/06/17 → 5/06/17

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10.23919/SNW.2017.8242287

Cite this

Kim, H., Son, D., Myoung, I., Kang, M., & Shin, H. (2017). Analysis on self heating effects in nanowire FET considering effective thermal conductivity of BEOL. In 2017 Silicon Nanoelectronics Workshop, SNW 2017 (pp. 41-42). Article 8242287 (2017 Silicon Nanoelectronics Workshop, SNW 2017; Vol. 2017-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/SNW.2017.8242287

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title = "Analysis on self heating effects in nanowire FET considering effective thermal conductivity of BEOL",

abstract = "Accurate evaluation of Self Heating Effects in highly down-scaled devices becomes essential for improved performance and reliability. However, complex structure of BEOL causes analysis of SHEs to be difficult To remove the difficulty, based on Rent's rule to obtain interconnect density function, effective thermal conductivity of BEOL versus metal volume density and average aspect ratio (p) was calculated. With results above, TCAD simulation for SHEs was performed in 5 nm node nanowire FET. As a result, lowered thermal conductivity by complicated structure can bring underestimated SHEs through simulation.",

author = "Hyunsuk Kim and Dokyun Son and Ilho Myoung and Myounggon Kang and Hyungcheol Shin",

note = "Publisher Copyright: {\textcopyright} 2017 JSAP.; 22nd Silicon Nanoelectronics Workshop, SNW 2017 ; Conference date: 04-06-2017 Through 05-06-2017",

year = "2017",

month = dec,

day = "29",

doi = "10.23919/SNW.2017.8242287",

language = "English",

series = "2017 Silicon Nanoelectronics Workshop, SNW 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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}

Kim, H, Son, D, Myoung, I, Kang, M & Shin, H 2017, Analysis on self heating effects in nanowire FET considering effective thermal conductivity of BEOL. in 2017 Silicon Nanoelectronics Workshop, SNW 2017., 8242287, 2017 Silicon Nanoelectronics Workshop, SNW 2017, vol. 2017-January, Institute of Electrical and Electronics Engineers Inc., pp. 41-42, 22nd Silicon Nanoelectronics Workshop, SNW 2017, Kyoto, Japan, 4/06/17. https://doi.org/10.23919/SNW.2017.8242287

Analysis on self heating effects in nanowire FET considering effective thermal conductivity of BEOL. / Kim, Hyunsuk; Son, Dokyun; Myoung, Ilho et al.
2017 Silicon Nanoelectronics Workshop, SNW 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 41-42 8242287 (2017 Silicon Nanoelectronics Workshop, SNW 2017; Vol. 2017-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Analysis on self heating effects in nanowire FET considering effective thermal conductivity of BEOL

AU - Kim, Hyunsuk

AU - Son, Dokyun

AU - Myoung, Ilho

AU - Kang, Myounggon

AU - Shin, Hyungcheol

PY - 2017/12/29

Y1 - 2017/12/29

N2 - Accurate evaluation of Self Heating Effects in highly down-scaled devices becomes essential for improved performance and reliability. However, complex structure of BEOL causes analysis of SHEs to be difficult To remove the difficulty, based on Rent's rule to obtain interconnect density function, effective thermal conductivity of BEOL versus metal volume density and average aspect ratio (p) was calculated. With results above, TCAD simulation for SHEs was performed in 5 nm node nanowire FET. As a result, lowered thermal conductivity by complicated structure can bring underestimated SHEs through simulation.

AB - Accurate evaluation of Self Heating Effects in highly down-scaled devices becomes essential for improved performance and reliability. However, complex structure of BEOL causes analysis of SHEs to be difficult To remove the difficulty, based on Rent's rule to obtain interconnect density function, effective thermal conductivity of BEOL versus metal volume density and average aspect ratio (p) was calculated. With results above, TCAD simulation for SHEs was performed in 5 nm node nanowire FET. As a result, lowered thermal conductivity by complicated structure can bring underestimated SHEs through simulation.

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U2 - 10.23919/SNW.2017.8242287

DO - 10.23919/SNW.2017.8242287

M3 - Conference contribution

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T3 - 2017 Silicon Nanoelectronics Workshop, SNW 2017

SP - 41

EP - 42

BT - 2017 Silicon Nanoelectronics Workshop, SNW 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 22nd Silicon Nanoelectronics Workshop, SNW 2017

Y2 - 4 June 2017 through 5 June 2017

ER -

Analysis on self heating effects in nanowire FET considering effective thermal conductivity of BEOL

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