TY - JOUR
T1 - Analysis on Self-Heating Effects in Three-Stacked Nanoplate FET
AU - Kim, Hyunsuk
AU - Son, Dokyun
AU - Myeong, Ilho
AU - Kang, Myounggon
AU - Jeon, Jongwook
AU - Shin, Hyungcheol
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/10
Y1 - 2018/10
N2 - In this paper, self-heating effects (SHEs) in three-stacked nanoplate FETs were investigated through the TCAD simulation. In order to obtain high reliability, the evaluation of SHEs was performed after ID - VG curve fitting based on the experimental data. First, general analysis on SHEs was conducted to confirm the influence of SHEs to electrical characteristics. The optimized nanoplate width for great electrical properties was proposed by using the figure-of-merit factor under the consideration of SHEs. In addition, difference of heat flux between FinFET and stacked nanoplate FET was analyzed. Based on the analysis, the two-step thermal resistance (Rth) model depending on drain voltage was proposed. The two-step Rth model in the stacked nanoplate FET matched well with the Berkeley short-channel IGFET model - common multigate model compared the other Rth models. A seven-stage ring oscillator with the proposed Rth model was demonstrated, and SHEs in the circuit level were confirmed.
AB - In this paper, self-heating effects (SHEs) in three-stacked nanoplate FETs were investigated through the TCAD simulation. In order to obtain high reliability, the evaluation of SHEs was performed after ID - VG curve fitting based on the experimental data. First, general analysis on SHEs was conducted to confirm the influence of SHEs to electrical characteristics. The optimized nanoplate width for great electrical properties was proposed by using the figure-of-merit factor under the consideration of SHEs. In addition, difference of heat flux between FinFET and stacked nanoplate FET was analyzed. Based on the analysis, the two-step thermal resistance (Rth) model depending on drain voltage was proposed. The two-step Rth model in the stacked nanoplate FET matched well with the Berkeley short-channel IGFET model - common multigate model compared the other Rth models. A seven-stage ring oscillator with the proposed Rth model was demonstrated, and SHEs in the circuit level were confirmed.
KW - Berkeley short-channel IGFET model-common multigate (BSIM CMG) modeling
KW - self-heating effect (SHE)
KW - stacked nanoplate FET
KW - thermal conductivity
KW - thermal resistance (R)
UR - http://www.scopus.com/inward/record.url?scp=85052641043&partnerID=8YFLogxK
U2 - 10.1109/TED.2018.2862918
DO - 10.1109/TED.2018.2862918
M3 - Article
AN - SCOPUS:85052641043
SN - 0018-9383
VL - 65
SP - 4520
EP - 4526
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 10
M1 - 8449097
ER -