Analytic approach to power-constrained CMOS low-noise amplifier design with figure of merit consideration

Ickhyun Song, Min Suk Koo, Hakchul Jung, Hee Sauk Jhon, Hyungcheol Shin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this paper, design approach for a 5.8-GHz power-constrained CMOS low-noise amplifier using 0.13-μm process technology is presented. To evaluate the overall performance of an LNA, figure of merit (FoM) is adopted. Figure of merit includes power gain, noise figure, power dissipation and the operation frequency. Each performance factor of FoM is analytically expressed in device parameters. We show that FoM is maximized by optimizing the transistor size and bias condition. Effect of the external capacitance between the gate and the source of the input transistor for power-constrained design is explained and its influence on FoM is also discussed.

Original languageEnglish
Title of host publicationTENCON 2007 - 2007 IEEE Region 10 Conference
DOIs
StatePublished - 2007
EventIEEE Region 10 Conference, TENCON 2007 - Taipei, Taiwan, Province of China
Duration: 30 Oct 20072 Nov 2007

Publication series

NameIEEE Region 10 Annual International Conference, Proceedings/TENCON

Conference

ConferenceIEEE Region 10 Conference, TENCON 2007
Country/TerritoryTaiwan, Province of China
CityTaipei
Period30/10/072/11/07

Fingerprint

Dive into the research topics of 'Analytic approach to power-constrained CMOS low-noise amplifier design with figure of merit consideration'. Together they form a unique fingerprint.

Cite this