Analytic model of a silicon nanowire pH sensor

Yun Seop Yu; Hyung Kun Park; Sung Woo Hwang; Doyeol Ahn

doi:10.1109/INEC.2010.5424671

Analytic model of a silicon nanowire pH sensor

Yun Seop Yu, Hyung Kun Park, Sung Woo Hwang, Doyeol Ahn

School of Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

An analytic model of silicon nanowire (Si-NW) pH sensor is presented. The model is based on the solution of the cylindrical Poisson equation and the nonlinear Poisson-Boltzmann equation in the Si-NW and the electrolyte, respectively. The results simulated from the proposed model are compared with experimental data.

Original language	English
Title of host publication	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages	656-657
Number of pages	2
DOIs	https://doi.org/10.1109/INEC.2010.5424671
State	Published - 2010
Event	2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: 3 Jan 2010 → 8 Jan 2010

Publication series

Name	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Conference

Conference	2010 3rd International Nanoelectronics Conference, INEC 2010
Country/Territory	China
City	Hongkong
Period	3/01/10 → 8/01/10

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10.1109/INEC.2010.5424671

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@inproceedings{1c094a51a559452c8fcb32dbf731a6ef,

title = "Analytic model of a silicon nanowire pH sensor",

abstract = "An analytic model of silicon nanowire (Si-NW) pH sensor is presented. The model is based on the solution of the cylindrical Poisson equation and the nonlinear Poisson-Boltzmann equation in the Si-NW and the electrolyte, respectively. The results simulated from the proposed model are compared with experimental data.",

author = "Yu, {Yun Seop} and Park, {Hyung Kun} and Hwang, {Sung Woo} and Doyeol Ahn",

year = "2010",

doi = "10.1109/INEC.2010.5424671",

language = "English",

isbn = "9781424435449",

series = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

pages = "656--657",

booktitle = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

note = "2010 3rd International Nanoelectronics Conference, INEC 2010 ; Conference date: 03-01-2010 Through 08-01-2010",

}

Yu, YS, Park, HK, Hwang, SW & Ahn, D 2010, Analytic model of a silicon nanowire pH sensor. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424671, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, pp. 656-657, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 3/01/10. https://doi.org/10.1109/INEC.2010.5424671

Analytic model of a silicon nanowire pH sensor. / Yu, Yun Seop; Park, Hyung Kun; Hwang, Sung Woo et al.
INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 656-657 5424671 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Analytic model of a silicon nanowire pH sensor

AU - Yu, Yun Seop

AU - Park, Hyung Kun

AU - Hwang, Sung Woo

AU - Ahn, Doyeol

PY - 2010

Y1 - 2010

N2 - An analytic model of silicon nanowire (Si-NW) pH sensor is presented. The model is based on the solution of the cylindrical Poisson equation and the nonlinear Poisson-Boltzmann equation in the Si-NW and the electrolyte, respectively. The results simulated from the proposed model are compared with experimental data.

AB - An analytic model of silicon nanowire (Si-NW) pH sensor is presented. The model is based on the solution of the cylindrical Poisson equation and the nonlinear Poisson-Boltzmann equation in the Si-NW and the electrolyte, respectively. The results simulated from the proposed model are compared with experimental data.

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U2 - 10.1109/INEC.2010.5424671

DO - 10.1109/INEC.2010.5424671

M3 - Conference contribution

AN - SCOPUS:77951654517

SN - 9781424435449

T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

SP - 656

EP - 657

BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010

Y2 - 3 January 2010 through 8 January 2010

ER -

Analytic model of a silicon nanowire pH sensor

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