Analytical threshold voltage model including effective conducting path effect (ECPE) for surrounding-gate MOSFETs (SGMOSFETs) with localized charges

Yun Seop Yu; Namki Cho; Sung Woo Hwang; Doyeol Ahn

doi:10.1109/TED.2010.2066278

Analytical threshold voltage model including effective conducting path effect (ECPE) for surrounding-gate MOSFETs (SGMOSFETs) with localized charges

Yun Seop Yu, Namki Cho, Sung Woo Hwang, Doyeol Ahn

School of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

On the basis of 2-D potential analysis performed while taking into account the effective conducting path effect, a new analytical model for threshold voltage in cylindrical surrounding-gate MOSFETs (SGMOSFETs) that contain localized charges is presented. From the 2-D Poisson's equation based on a parabolic potential approximation, a simple and accurate analytical expression for the threshold voltage is derived. The proposed model is validated using a 3-D device simulator, and good agreement is obtained for various device dimensions and charge distributions. This model can be used to investigate hot-carrier-induced degradation of SGMOSFETs.

Original language	English
Article number	5565457
Pages (from-to)	3176-3180
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	57
Issue number	11
DOIs	https://doi.org/10.1109/TED.2010.2066278
State	Published - Nov 2010

Keywords

Effective conducting path effect (ECPE)
hot-carrier effects (HCEs)
localized charge
surface potential
surrounding-gate MOSFET (SGMOSFET)
threshold voltage

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10.1109/TED.2010.2066278

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title = "Analytical threshold voltage model including effective conducting path effect (ECPE) for surrounding-gate MOSFETs (SGMOSFETs) with localized charges",

abstract = "On the basis of 2-D potential analysis performed while taking into account the effective conducting path effect, a new analytical model for threshold voltage in cylindrical surrounding-gate MOSFETs (SGMOSFETs) that contain localized charges is presented. From the 2-D Poisson's equation based on a parabolic potential approximation, a simple and accurate analytical expression for the threshold voltage is derived. The proposed model is validated using a 3-D device simulator, and good agreement is obtained for various device dimensions and charge distributions. This model can be used to investigate hot-carrier-induced degradation of SGMOSFETs.",

keywords = "Effective conducting path effect (ECPE), hot-carrier effects (HCEs), localized charge, surface potential, surrounding-gate MOSFET (SGMOSFET), threshold voltage",

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AU - Yu, Yun Seop

AU - Cho, Namki

AU - Hwang, Sung Woo

AU - Ahn, Doyeol

PY - 2010/11

Y1 - 2010/11

N2 - On the basis of 2-D potential analysis performed while taking into account the effective conducting path effect, a new analytical model for threshold voltage in cylindrical surrounding-gate MOSFETs (SGMOSFETs) that contain localized charges is presented. From the 2-D Poisson's equation based on a parabolic potential approximation, a simple and accurate analytical expression for the threshold voltage is derived. The proposed model is validated using a 3-D device simulator, and good agreement is obtained for various device dimensions and charge distributions. This model can be used to investigate hot-carrier-induced degradation of SGMOSFETs.

AB - On the basis of 2-D potential analysis performed while taking into account the effective conducting path effect, a new analytical model for threshold voltage in cylindrical surrounding-gate MOSFETs (SGMOSFETs) that contain localized charges is presented. From the 2-D Poisson's equation based on a parabolic potential approximation, a simple and accurate analytical expression for the threshold voltage is derived. The proposed model is validated using a 3-D device simulator, and good agreement is obtained for various device dimensions and charge distributions. This model can be used to investigate hot-carrier-induced degradation of SGMOSFETs.

KW - Effective conducting path effect (ECPE)

KW - hot-carrier effects (HCEs)

KW - localized charge

KW - surface potential

KW - surrounding-gate MOSFET (SGMOSFET)

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Analytical threshold voltage model including effective conducting path effect (ECPE) for surrounding-gate MOSFETs (SGMOSFETs) with localized charges

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Keywords

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