Anisotropic tuning behavior in epitaxial Ba0.5Sr0.5TiO3 thin films

S. Hyun; J. H. Lee; S. S. Kim; K. Char; S. J. Park; J. Sok; E. H. Lee

doi:10.1063/1.1323996

Anisotropic tuning behavior in epitaxial Ba_0.5Sr_0.5TiO₃ thin films

S. Hyun, J. H. Lee, S. S. Kim, K. Char, S. J. Park, J. Sok, E. H. Lee

Department of Physics

Research output: Contribution to journal › Article › peer-review

50 Scopus citations

Abstract

The tuning properties of epitaxial Ba_0.5Sr_0.5TiO₃ (BST) thin films were investigated by a scanning microwave microscope (SMM) and an LCR meter. Although the BST films on LaAlO₃ and MgO substrates showed similar tuning behavior when measured by the LCR meter at 1 MHz, remarkably different tuning properties were observed in the planar capacitors measured by SMM. The BST films on LaAlO₃ substrates were hardly tuned when measured by SMM, while the BST films on MgO showed significant tuning behavior between the electrodes. We attribute these different tuning properties to the anisotropic tuning caused by the strain in BST films. This will enable the design of much improved tunable devices while minimizing the loss associated with the dielectric.

Original language	English
Pages (from-to)	3084-3086
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	19
DOIs	https://doi.org/10.1063/1.1323996
State	Published - 6 Nov 2000

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title = "Anisotropic tuning behavior in epitaxial Ba0.5Sr0.5TiO3 thin films",

abstract = "The tuning properties of epitaxial Ba0.5Sr0.5TiO3 (BST) thin films were investigated by a scanning microwave microscope (SMM) and an LCR meter. Although the BST films on LaAlO3 and MgO substrates showed similar tuning behavior when measured by the LCR meter at 1 MHz, remarkably different tuning properties were observed in the planar capacitors measured by SMM. The BST films on LaAlO3 substrates were hardly tuned when measured by SMM, while the BST films on MgO showed significant tuning behavior between the electrodes. We attribute these different tuning properties to the anisotropic tuning caused by the strain in BST films. This will enable the design of much improved tunable devices while minimizing the loss associated with the dielectric.",

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T1 - Anisotropic tuning behavior in epitaxial Ba0.5Sr0.5TiO3 thin films

AU - Hyun, S.

AU - Lee, J. H.

AU - Kim, S. S.

AU - Char, K.

AU - Park, S. J.

AU - Sok, J.

AU - Lee, E. H.

PY - 2000/11/6

Y1 - 2000/11/6

N2 - The tuning properties of epitaxial Ba0.5Sr0.5TiO3 (BST) thin films were investigated by a scanning microwave microscope (SMM) and an LCR meter. Although the BST films on LaAlO3 and MgO substrates showed similar tuning behavior when measured by the LCR meter at 1 MHz, remarkably different tuning properties were observed in the planar capacitors measured by SMM. The BST films on LaAlO3 substrates were hardly tuned when measured by SMM, while the BST films on MgO showed significant tuning behavior between the electrodes. We attribute these different tuning properties to the anisotropic tuning caused by the strain in BST films. This will enable the design of much improved tunable devices while minimizing the loss associated with the dielectric.

AB - The tuning properties of epitaxial Ba0.5Sr0.5TiO3 (BST) thin films were investigated by a scanning microwave microscope (SMM) and an LCR meter. Although the BST films on LaAlO3 and MgO substrates showed similar tuning behavior when measured by the LCR meter at 1 MHz, remarkably different tuning properties were observed in the planar capacitors measured by SMM. The BST films on LaAlO3 substrates were hardly tuned when measured by SMM, while the BST films on MgO showed significant tuning behavior between the electrodes. We attribute these different tuning properties to the anisotropic tuning caused by the strain in BST films. This will enable the design of much improved tunable devices while minimizing the loss associated with the dielectric.

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Anisotropic tuning behavior in epitaxial Ba_0.5Sr_0.5TiO₃ thin films

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