Annealing effect of low temperature (< 150 °C) Cat-CVD gate dielectric silicon nitride films diluted with atomic hydrogen

Ki Su Keum; Kyoung Min Lee; Jae Dam Hwang; Youn Jin Lee; Kil Sun No; Wan Shick Hong

Annealing effect of low temperature (< 150 °C) Cat-CVD gate dielectric silicon nitride films diluted with atomic hydrogen

Ki Su Keum, Kyoung Min Lee, Jae Dam Hwang, Youn Jin Lee, Kil Sun No, Wan Shick Hong

Department of Materials Science and Engineering

University of Seoul

Research output: Contribution to conference › Paper › peer-review

Abstract

We fabricated silicon nitride (SiN_x) films for gate dielectric layers at low temperature (< 150 °C) by Cat-CVD system. in-situ annealing was performed without vacuum breaking after SiN_x films depositon. Samples were annealed by oven. As a result, including hydrogen samples show more effective dielectric properties improvement.

Original language	English
Pages	2249-2250
Number of pages	2
State	Published - 2010
Event	17th International Display Workshops, IDW'10 - Fukuoka, Japan Duration: 1 Dec 2010 → 3 Dec 2010

Conference

Conference	17th International Display Workshops, IDW'10
Country/Territory	Japan
City	Fukuoka
Period	1/12/10 → 3/12/10

Cite this

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title = "Annealing effect of low temperature (< 150 °C) Cat-CVD gate dielectric silicon nitride films diluted with atomic hydrogen",

abstract = "We fabricated silicon nitride (SiNx) films for gate dielectric layers at low temperature (< 150 °C) by Cat-CVD system. in-situ annealing was performed without vacuum breaking after SiNx films depositon. Samples were annealed by oven. As a result, including hydrogen samples show more effective dielectric properties improvement.",

author = "Keum, {Ki Su} and Lee, {Kyoung Min} and Hwang, {Jae Dam} and Lee, {Youn Jin} and No, {Kil Sun} and Hong, {Wan Shick}",

year = "2010",

language = "English",

pages = "2249--2250",

note = "17th International Display Workshops, IDW'10 ; Conference date: 01-12-2010 Through 03-12-2010",

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TY - CONF

T1 - Annealing effect of low temperature (< 150 °C) Cat-CVD gate dielectric silicon nitride films diluted with atomic hydrogen

AU - Keum, Ki Su

AU - Lee, Kyoung Min

AU - Hwang, Jae Dam

AU - Lee, Youn Jin

AU - No, Kil Sun

AU - Hong, Wan Shick

PY - 2010

Y1 - 2010

N2 - We fabricated silicon nitride (SiNx) films for gate dielectric layers at low temperature (< 150 °C) by Cat-CVD system. in-situ annealing was performed without vacuum breaking after SiNx films depositon. Samples were annealed by oven. As a result, including hydrogen samples show more effective dielectric properties improvement.

AB - We fabricated silicon nitride (SiNx) films for gate dielectric layers at low temperature (< 150 °C) by Cat-CVD system. in-situ annealing was performed without vacuum breaking after SiNx films depositon. Samples were annealed by oven. As a result, including hydrogen samples show more effective dielectric properties improvement.

UR - http://www.scopus.com/inward/record.url?scp=79956296913&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:79956296913

SP - 2249

EP - 2250

T2 - 17th International Display Workshops, IDW'10

Y2 - 1 December 2010 through 3 December 2010

ER -

Annealing effect of low temperature (< 150 °C) Cat-CVD gate dielectric silicon nitride films diluted with atomic hydrogen

Abstract

Conference

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