Annealing effect of low temperature (< 150 °C) Cat-CVD gate dielectric silicon nitride films diluted with atomic hydrogen

Ki Su Keum; Kyoung Min Lee; Jae Dam Hwang; Youn Jin Lee; Kil Sun No; Wan Shick Hong

Annealing effect of low temperature (< 150 °C) Cat-CVD gate dielectric silicon nitride films diluted with atomic hydrogen

Ki Su Keum
, Kyoung Min Lee
, Jae Dam Hwang
, Youn Jin Lee
, Kil Sun No
, Wan Shick Hong

Department of Materials Science and Engineering

University of Seoul

Research output: Contribution to conference › Paper › peer-review

Abstract

We fabricated silicon nitride (SiN_x) films for gate dielectric layers at low temperature (< 150 °C) by Cat-CVD system. in-situ annealing was performed without vacuum breaking after SiN_x films depositon. Samples were annealed by oven. As a result, including hydrogen samples show more effective dielectric properties improvement.

Original language	English
Pages	2249-2250
Number of pages	2
State	Published - 2010
Event	17th International Display Workshops, IDW'10 - Fukuoka, Japan Duration: 1 Dec 2010 → 3 Dec 2010

Conference

Conference	17th International Display Workshops, IDW'10
Country/Territory	Japan
City	Fukuoka
Period	1/12/10 → 3/12/10

Cite this

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title = "Annealing effect of low temperature (< 150 °C) Cat-CVD gate dielectric silicon nitride films diluted with atomic hydrogen",

abstract = "We fabricated silicon nitride (SiNx) films for gate dielectric layers at low temperature (< 150 °C) by Cat-CVD system. in-situ annealing was performed without vacuum breaking after SiNx films depositon. Samples were annealed by oven. As a result, including hydrogen samples show more effective dielectric properties improvement.",

author = "Keum, \{Ki Su\} and Lee, \{Kyoung Min\} and Hwang, \{Jae Dam\} and Lee, \{Youn Jin\} and No, \{Kil Sun\} and Hong, \{Wan Shick\}",

year = "2010",

language = "English",

pages = "2249--2250",

note = "17th International Display Workshops, IDW'10 ; Conference date: 01-12-2010 Through 03-12-2010",

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TY - CONF

T1 - Annealing effect of low temperature (< 150 °C) Cat-CVD gate dielectric silicon nitride films diluted with atomic hydrogen

AU - Keum, Ki Su

AU - Lee, Kyoung Min

AU - Hwang, Jae Dam

AU - Lee, Youn Jin

AU - No, Kil Sun

AU - Hong, Wan Shick

PY - 2010

Y1 - 2010

N2 - We fabricated silicon nitride (SiNx) films for gate dielectric layers at low temperature (< 150 °C) by Cat-CVD system. in-situ annealing was performed without vacuum breaking after SiNx films depositon. Samples were annealed by oven. As a result, including hydrogen samples show more effective dielectric properties improvement.

AB - We fabricated silicon nitride (SiNx) films for gate dielectric layers at low temperature (< 150 °C) by Cat-CVD system. in-situ annealing was performed without vacuum breaking after SiNx films depositon. Samples were annealed by oven. As a result, including hydrogen samples show more effective dielectric properties improvement.

UR - https://www.scopus.com/pages/publications/79956296913

M3 - Paper

AN - SCOPUS:79956296913

SP - 2249

EP - 2250

T2 - 17th International Display Workshops, IDW'10

Y2 - 1 December 2010 through 3 December 2010

ER -

Annealing effect of low temperature (< 150 °C) Cat-CVD gate dielectric silicon nitride films diluted with atomic hydrogen

Abstract

Conference

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