Application of atomic-force-microscope direct patterning to selective positioning of InAs quantum dots on GaAs

C. K. Hyon; S. C. Choi; S. H. Song; S. W. Hwang; M. H. Son; D. Ahn; Y. J. Park; E. K. Kim

doi:10.1063/1.1318393

Application of atomic-force-microscope direct patterning to selective positioning of InAs quantum dots on GaAs

C. K. Hyon, S. C. Choi, S. H. Song, S. W. Hwang, M. H. Son, D. Ahn, Y. J. Park, E. K. Kim

School of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

50 Scopus citations

Abstract

The application of atomic-force-microscope (AFM) direct patterning to the selective positioning of InAs quantum dots (QDs) on a (100) GaAs substrate has been proposed and experimentally implemented. The AFM direct patterning was used to generate various patterns of several tens of nanometers in size, and InAs QDs were subsequently grown by a metalorganic chemical vapor deposition technique. A nonuniform distribution of the QDs was observed near the patterns. The detailed shape of the QD distribution and the size of the QDs depended on the geometrical properties such as the sidewall angle, the spacing, and the width of the patterns. We have been able to ascertain, through our work, what growth conditions are necessary for QDs' alignment along the patterns.

Original language	English
Pages (from-to)	2607-2609
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	16
DOIs	https://doi.org/10.1063/1.1318393
State	Published - 16 Oct 2000

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abstract = "The application of atomic-force-microscope (AFM) direct patterning to the selective positioning of InAs quantum dots (QDs) on a (100) GaAs substrate has been proposed and experimentally implemented. The AFM direct patterning was used to generate various patterns of several tens of nanometers in size, and InAs QDs were subsequently grown by a metalorganic chemical vapor deposition technique. A nonuniform distribution of the QDs was observed near the patterns. The detailed shape of the QD distribution and the size of the QDs depended on the geometrical properties such as the sidewall angle, the spacing, and the width of the patterns. We have been able to ascertain, through our work, what growth conditions are necessary for QDs' alignment along the patterns.",

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AU - Hyon, C. K.

AU - Choi, S. C.

AU - Song, S. H.

AU - Hwang, S. W.

AU - Son, M. H.

AU - Ahn, D.

AU - Park, Y. J.

AU - Kim, E. K.

PY - 2000/10/16

Y1 - 2000/10/16

N2 - The application of atomic-force-microscope (AFM) direct patterning to the selective positioning of InAs quantum dots (QDs) on a (100) GaAs substrate has been proposed and experimentally implemented. The AFM direct patterning was used to generate various patterns of several tens of nanometers in size, and InAs QDs were subsequently grown by a metalorganic chemical vapor deposition technique. A nonuniform distribution of the QDs was observed near the patterns. The detailed shape of the QD distribution and the size of the QDs depended on the geometrical properties such as the sidewall angle, the spacing, and the width of the patterns. We have been able to ascertain, through our work, what growth conditions are necessary for QDs' alignment along the patterns.

AB - The application of atomic-force-microscope (AFM) direct patterning to the selective positioning of InAs quantum dots (QDs) on a (100) GaAs substrate has been proposed and experimentally implemented. The AFM direct patterning was used to generate various patterns of several tens of nanometers in size, and InAs QDs were subsequently grown by a metalorganic chemical vapor deposition technique. A nonuniform distribution of the QDs was observed near the patterns. The detailed shape of the QD distribution and the size of the QDs depended on the geometrical properties such as the sidewall angle, the spacing, and the width of the patterns. We have been able to ascertain, through our work, what growth conditions are necessary for QDs' alignment along the patterns.

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Application of atomic-force-microscope direct patterning to selective positioning of InAs quantum dots on GaAs

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