Abstract
In this letter, a novel SONOS NAND Flash memory array featuring arch-shaped silicon fin and extended word lines (WL) is proposed to improve virtual source/drain (VSD) performance. The arch shape concentrates electric field, resulting in higher electron concentration at the VSD region and higher on -state cell current. In addition, the extended WL process improves the short-channel-effect (SCE) immunity and I-V characteristics. To verify these, an arch VSD NAND array device was fabricated and characterized. The integrated device shows very small SCE while obtaining high on-state cell current. Program and disturbance characteristics of the device are also confirmed.
Original language | English |
---|---|
Article number | 5605222 |
Pages (from-to) | 1374-1376 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 31 |
Issue number | 12 |
DOIs | |
State | Published - Dec 2010 |
Keywords
- Extended word line (WL)
- Flash memory
- field concentration effect
- virtual source/drain (VSD)