Arch NAND flash memory array with improved virtual source/drain performance

Wandong Kim; Jung Hoon Lee; Jang Gn Yun; Seongjae Cho; Dong Hua Li; Yoon Kim; Doo Hyun Kim; Gil Sung Lee; Se Hwan Park; Won Bo Shim; Jong Ho Lee; Hyungcheol Shin; Byung Gook Park

doi:10.1109/LED.2010.2074180

Arch NAND flash memory array with improved virtual source/drain performance

Wandong Kim
, Jung Hoon Lee
, Jang Gn Yun
, Seongjae Cho
, Dong Hua Li
, Yoon Kim
, Doo Hyun Kim
, Gil Sung Lee
, Se Hwan Park
, Won Bo Shim
, Jong Ho Lee
, Hyungcheol Shin
, Byung Gook Park

School of Electrical and Computer Engineering

Seoul National University

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

In this letter, a novel SONOS NAND Flash memory array featuring arch-shaped silicon fin and extended word lines (WL) is proposed to improve virtual source/drain (VSD) performance. The arch shape concentrates electric field, resulting in higher electron concentration at the VSD region and higher on -state cell current. In addition, the extended WL process improves the short-channel-effect (SCE) immunity and I-V characteristics. To verify these, an arch VSD NAND array device was fabricated and characterized. The integrated device shows very small SCE while obtaining high on-state cell current. Program and disturbance characteristics of the device are also confirmed.

Original language	English
Article number	5605222
Pages (from-to)	1374-1376
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	12
DOIs	https://doi.org/10.1109/LED.2010.2074180
State	Published - Dec 2010

Keywords

Extended word line (WL)
Flash memory
field concentration effect
virtual source/drain (VSD)

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10.1109/LED.2010.2074180

Cite this

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title = "Arch NAND flash memory array with improved virtual source/drain performance",

abstract = "In this letter, a novel SONOS NAND Flash memory array featuring arch-shaped silicon fin and extended word lines (WL) is proposed to improve virtual source/drain (VSD) performance. The arch shape concentrates electric field, resulting in higher electron concentration at the VSD region and higher on -state cell current. In addition, the extended WL process improves the short-channel-effect (SCE) immunity and I-V characteristics. To verify these, an arch VSD NAND array device was fabricated and characterized. The integrated device shows very small SCE while obtaining high on-state cell current. Program and disturbance characteristics of the device are also confirmed.",

keywords = "Extended word line (WL), Flash memory, field concentration effect, virtual source/drain (VSD)",

author = "Wandong Kim and Lee, \{Jung Hoon\} and Yun, \{Jang Gn\} and Seongjae Cho and Li, \{Dong Hua\} and Yoon Kim and Kim, \{Doo Hyun\} and Lee, \{Gil Sung\} and Park, \{Se Hwan\} and Shim, \{Won Bo\} and Lee, \{Jong Ho\} and Hyungcheol Shin and Park, \{Byung Gook\}",

year = "2010",

month = dec,

doi = "10.1109/LED.2010.2074180",

language = "English",

volume = "31",

pages = "1374--1376",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

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TY - JOUR

T1 - Arch NAND flash memory array with improved virtual source/drain performance

AU - Kim, Wandong

AU - Lee, Jung Hoon

AU - Yun, Jang Gn

AU - Cho, Seongjae

AU - Li, Dong Hua

AU - Kim, Yoon

AU - Kim, Doo Hyun

AU - Lee, Gil Sung

AU - Park, Se Hwan

AU - Shim, Won Bo

AU - Lee, Jong Ho

AU - Shin, Hyungcheol

AU - Park, Byung Gook

PY - 2010/12

Y1 - 2010/12

N2 - In this letter, a novel SONOS NAND Flash memory array featuring arch-shaped silicon fin and extended word lines (WL) is proposed to improve virtual source/drain (VSD) performance. The arch shape concentrates electric field, resulting in higher electron concentration at the VSD region and higher on -state cell current. In addition, the extended WL process improves the short-channel-effect (SCE) immunity and I-V characteristics. To verify these, an arch VSD NAND array device was fabricated and characterized. The integrated device shows very small SCE while obtaining high on-state cell current. Program and disturbance characteristics of the device are also confirmed.

AB - In this letter, a novel SONOS NAND Flash memory array featuring arch-shaped silicon fin and extended word lines (WL) is proposed to improve virtual source/drain (VSD) performance. The arch shape concentrates electric field, resulting in higher electron concentration at the VSD region and higher on -state cell current. In addition, the extended WL process improves the short-channel-effect (SCE) immunity and I-V characteristics. To verify these, an arch VSD NAND array device was fabricated and characterized. The integrated device shows very small SCE while obtaining high on-state cell current. Program and disturbance characteristics of the device are also confirmed.

KW - Extended word line (WL)

KW - Flash memory

KW - field concentration effect

KW - virtual source/drain (VSD)

UR - https://www.scopus.com/pages/publications/78649446478

U2 - 10.1109/LED.2010.2074180

DO - 10.1109/LED.2010.2074180

M3 - Article

AN - SCOPUS:78649446478

SN - 0741-3106

VL - 31

SP - 1374

EP - 1376

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

M1 - 5605222

ER -

Arch NAND flash memory array with improved virtual source/drain performance

Abstract

Keywords

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