Atomic arrangement of Al-induced clusters on Si(0 0 1) surface at high temperature

J. H. Seo; J. Y. Park; S. K. Jung; K. H. Yoo; C. N. Whang; S. S. Kim; D. S. Choi; K. H. Chae

doi:10.1016/j.cplett.2005.10.010

Atomic arrangement of Al-induced clusters on Si(0 0 1) surface at high temperature

J. H. Seo, J. Y. Park, S. K. Jung, K. H. Yoo, C. N. Whang, S. S. Kim, D. S. Choi, K. H. Chae

Department of Physics

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The atomic structure of the Al-induced clusters on Si(0 0 1) surface formed by the annealing of 0.5 ML Al/Si(0 0 1) at 500 °C has been studied using coaxial impact collision ion scattering spectroscopy (CAICISS). CAICISS results proposed that the Al atoms occupy the cave site (T4 site) and off-centered T4 site. To determine the structure of the Al-induced clusters definitely, classical ion-scattering trajectory simulations using scattering and recoiling imaging code (SARIC) have been performed for the recently proposed most possible four different cluster models (Bunk, Zotov, Kotlyar, and Zavodinsky model). Our CAICISS spectra and simulation results show that the Bunk model is the best plausible one among the models. As the results of the simulations, it is found that Al-Si dimers has been oriented on the topmost layer of the Si(0 0 1) surface with a bonding length (Δz) of 1.00 ± 0.05 Å.

Original language	English
Pages (from-to)	72-77
Number of pages	6
Journal	Chemical Physics Letters
Volume	417
Issue number	1-3
DOIs	https://doi.org/10.1016/j.cplett.2005.10.010
State	Published - 9 Jan 2006

Access to Document

10.1016/j.cplett.2005.10.010

Cite this

@article{cfe9d54d5bea47e5809a8c8797013e18,

title = "Atomic arrangement of Al-induced clusters on Si(0 0 1) surface at high temperature",

abstract = "The atomic structure of the Al-induced clusters on Si(0 0 1) surface formed by the annealing of 0.5 ML Al/Si(0 0 1) at 500 °C has been studied using coaxial impact collision ion scattering spectroscopy (CAICISS). CAICISS results proposed that the Al atoms occupy the cave site (T4 site) and off-centered T4 site. To determine the structure of the Al-induced clusters definitely, classical ion-scattering trajectory simulations using scattering and recoiling imaging code (SARIC) have been performed for the recently proposed most possible four different cluster models (Bunk, Zotov, Kotlyar, and Zavodinsky model). Our CAICISS spectra and simulation results show that the Bunk model is the best plausible one among the models. As the results of the simulations, it is found that Al-Si dimers has been oriented on the topmost layer of the Si(0 0 1) surface with a bonding length (Δz) of 1.00 ± 0.05 {\AA}.",

author = "Seo, {J. H.} and Park, {J. Y.} and Jung, {S. K.} and Yoo, {K. H.} and Whang, {C. N.} and Kim, {S. S.} and Choi, {D. S.} and Chae, {K. H.}",

year = "2006",

month = jan,

day = "9",

doi = "10.1016/j.cplett.2005.10.010",

language = "English",

volume = "417",

pages = "72--77",

journal = "Chemical Physics Letters",

issn = "0009-2614",

publisher = "Elsevier B.V.",

number = "1-3",

}

TY - JOUR

T1 - Atomic arrangement of Al-induced clusters on Si(0 0 1) surface at high temperature

AU - Seo, J. H.

AU - Park, J. Y.

AU - Jung, S. K.

AU - Yoo, K. H.

AU - Whang, C. N.

AU - Kim, S. S.

AU - Choi, D. S.

AU - Chae, K. H.

PY - 2006/1/9

Y1 - 2006/1/9

N2 - The atomic structure of the Al-induced clusters on Si(0 0 1) surface formed by the annealing of 0.5 ML Al/Si(0 0 1) at 500 °C has been studied using coaxial impact collision ion scattering spectroscopy (CAICISS). CAICISS results proposed that the Al atoms occupy the cave site (T4 site) and off-centered T4 site. To determine the structure of the Al-induced clusters definitely, classical ion-scattering trajectory simulations using scattering and recoiling imaging code (SARIC) have been performed for the recently proposed most possible four different cluster models (Bunk, Zotov, Kotlyar, and Zavodinsky model). Our CAICISS spectra and simulation results show that the Bunk model is the best plausible one among the models. As the results of the simulations, it is found that Al-Si dimers has been oriented on the topmost layer of the Si(0 0 1) surface with a bonding length (Δz) of 1.00 ± 0.05 Å.

AB - The atomic structure of the Al-induced clusters on Si(0 0 1) surface formed by the annealing of 0.5 ML Al/Si(0 0 1) at 500 °C has been studied using coaxial impact collision ion scattering spectroscopy (CAICISS). CAICISS results proposed that the Al atoms occupy the cave site (T4 site) and off-centered T4 site. To determine the structure of the Al-induced clusters definitely, classical ion-scattering trajectory simulations using scattering and recoiling imaging code (SARIC) have been performed for the recently proposed most possible four different cluster models (Bunk, Zotov, Kotlyar, and Zavodinsky model). Our CAICISS spectra and simulation results show that the Bunk model is the best plausible one among the models. As the results of the simulations, it is found that Al-Si dimers has been oriented on the topmost layer of the Si(0 0 1) surface with a bonding length (Δz) of 1.00 ± 0.05 Å.

UR - http://www.scopus.com/inward/record.url?scp=29144513707&partnerID=8YFLogxK

U2 - 10.1016/j.cplett.2005.10.010

DO - 10.1016/j.cplett.2005.10.010

M3 - Article

AN - SCOPUS:29144513707

SN - 0009-2614

VL - 417

SP - 72

EP - 77

JO - Chemical Physics Letters

JF - Chemical Physics Letters

IS - 1-3

ER -

Atomic arrangement of Al-induced clusters on Si(0 0 1) surface at high temperature

Abstract

Access to Document

Other files and links

Fingerprint

Cite this