Atomic arrangements of a CuAu-I type ordered structure in strained in x Ga1 - X As/In y Al1 - Y As multiple quantum wells

D. U. Lee, J. Y. Jin, T. Y. Yun, T. W. Kim, H. S. Lee, M. S. Kwon, J. Y. Lee

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1 Scopus citations

Abstract

Atomic arrangements of a CuAu-I type ordered structure in lattice mismatched InxGa1-xAs/InyAl1-yAs multiple quantum well (MQW) grown by molecular beam epitaxy (MBE) were demonstrated. Selected area electron diffraction pattern (SADP) measurements were performed in order to investigate the atomic and the ordered structures of lattice matched and lattice mismatched MQWs. The results of the SADP measurements on the lattice mismatched superlattices showed the existence of a CuAu-I type ordered structure. It was stated that the results can help improve understanding of the microstructural properties of the strained In xGa1-xAs/InyAl1-xAs MQWs.

Original languageEnglish
Pages (from-to)3843-3846
Number of pages4
JournalJournal of Materials Science
Volume40
Issue number14
DOIs
StatePublished - Jul 2005

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