Atomic structure of Cs grown on Si(001)(2 × 1) surface by coaxial impact collision ion scattering spectroscopy

J. Y. Kim; J. Y. Park; J. H. Seo; C. N. Whang; S. S. Kim; D. S. Choi; H. J. Kang; K. H. Chae

doi:10.1016/S1567-1739(02)00241-9

Atomic structure of Cs grown on Si(001)(2 × 1) surface by coaxial impact collision ion scattering spectroscopy

J. Y. Kim, J. Y. Park, J. H. Seo, C. N. Whang, S. S. Kim, D. S. Choi, H. J. Kang, K. H. Chae

Department of Physics

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Abstract

The atomic structure and the saturation coverage of Cs on the Si(0 0 1)(2 × 1) surface at room temperature have been studied by coaxial impact collision ion scattering spectroscopy (CAICISS). For the atomic structure of saturated Cs/Si(0 0 1)(2 -xt 1) surface, it is found that Cs atoms occupy a single adsorption site at T3 on the Si(0 0 1) surface. The height of Cs atoms adsorbed at T3 site is 3:18 ± 0:05 Å from the second layer of Si(0 0 1)(2 × 1) surface. The saturation coverage estimated from the measured CAICISS intensity ratio and the proposed atomic structure is found to be 0:46 × 0:06 ML.

Original language	English
Pages (from-to)	83-88
Number of pages	6
Journal	Current Applied Physics
Volume	3
Issue number	1
DOIs	https://doi.org/10.1016/S1567-1739(02)00241-9
State	Published - Feb 2003

Keywords

Cesium
Low energy ion scattering
Silicon
Surface structure

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10.1016/S1567-1739(02)00241-9

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title = "Atomic structure of Cs grown on Si(001)(2 × 1) surface by coaxial impact collision ion scattering spectroscopy",

abstract = "The atomic structure and the saturation coverage of Cs on the Si(0 0 1)(2 × 1) surface at room temperature have been studied by coaxial impact collision ion scattering spectroscopy (CAICISS). For the atomic structure of saturated Cs/Si(0 0 1)(2 -xt 1) surface, it is found that Cs atoms occupy a single adsorption site at T3 on the Si(0 0 1) surface. The height of Cs atoms adsorbed at T3 site is 3:18 ± 0:05 {\AA} from the second layer of Si(0 0 1)(2 × 1) surface. The saturation coverage estimated from the measured CAICISS intensity ratio and the proposed atomic structure is found to be 0:46 × 0:06 ML.",

keywords = "Cesium, Low energy ion scattering, Silicon, Surface structure",

author = "Kim, {J. Y.} and Park, {J. Y.} and Seo, {J. H.} and Whang, {C. N.} and Kim, {S. S.} and Choi, {D. S.} and Kang, {H. J.} and Chae, {K. H.}",

year = "2003",

month = feb,

doi = "10.1016/S1567-1739(02)00241-9",

language = "English",

volume = "3",

pages = "83--88",

journal = "Current Applied Physics",

issn = "1567-1739",

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TY - JOUR

T1 - Atomic structure of Cs grown on Si(001)(2 × 1) surface by coaxial impact collision ion scattering spectroscopy

AU - Kim, J. Y.

AU - Park, J. Y.

AU - Seo, J. H.

AU - Whang, C. N.

AU - Kim, S. S.

AU - Choi, D. S.

AU - Kang, H. J.

AU - Chae, K. H.

PY - 2003/2

Y1 - 2003/2

N2 - The atomic structure and the saturation coverage of Cs on the Si(0 0 1)(2 × 1) surface at room temperature have been studied by coaxial impact collision ion scattering spectroscopy (CAICISS). For the atomic structure of saturated Cs/Si(0 0 1)(2 -xt 1) surface, it is found that Cs atoms occupy a single adsorption site at T3 on the Si(0 0 1) surface. The height of Cs atoms adsorbed at T3 site is 3:18 ± 0:05 Å from the second layer of Si(0 0 1)(2 × 1) surface. The saturation coverage estimated from the measured CAICISS intensity ratio and the proposed atomic structure is found to be 0:46 × 0:06 ML.

AB - The atomic structure and the saturation coverage of Cs on the Si(0 0 1)(2 × 1) surface at room temperature have been studied by coaxial impact collision ion scattering spectroscopy (CAICISS). For the atomic structure of saturated Cs/Si(0 0 1)(2 -xt 1) surface, it is found that Cs atoms occupy a single adsorption site at T3 on the Si(0 0 1) surface. The height of Cs atoms adsorbed at T3 site is 3:18 ± 0:05 Å from the second layer of Si(0 0 1)(2 × 1) surface. The saturation coverage estimated from the measured CAICISS intensity ratio and the proposed atomic structure is found to be 0:46 × 0:06 ML.

KW - Cesium

KW - Low energy ion scattering

KW - Silicon

KW - Surface structure

UR - http://www.scopus.com/inward/record.url?scp=0037319416&partnerID=8YFLogxK

U2 - 10.1016/S1567-1739(02)00241-9

DO - 10.1016/S1567-1739(02)00241-9

M3 - Article

AN - SCOPUS:0037319416

SN - 1567-1739

VL - 3

SP - 83

EP - 88

JO - Current Applied Physics

JF - Current Applied Physics

IS - 1

ER -

Atomic structure of Cs grown on Si(001)(2 × 1) surface by coaxial impact collision ion scattering spectroscopy

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Keywords

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