Atomic structure of Cs grown on Si(001)(2 × 1) surface by coaxial impact collision ion scattering spectroscopy

J. Y. Kim; J. Y. Park; J. H. Seo; C. N. Whang; S. S. Kim; D. S. Choi; H. J. Kang; K. H. Chae

doi:10.1016/S1567-1739(02)00241-9

Atomic structure of Cs grown on Si(001)(2 × 1) surface by coaxial impact collision ion scattering spectroscopy

J. Y. Kim
, J. Y. Park
, J. H. Seo
, C. N. Whang
, S. S. Kim
, D. S. Choi
, H. J. Kang
, K. H. Chae

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The atomic structure and the saturation coverage of Cs on the Si(0 0 1)(2 × 1) surface at room temperature have been studied by coaxial impact collision ion scattering spectroscopy (CAICISS). For the atomic structure of saturated Cs/Si(0 0 1)(2 -xt 1) surface, it is found that Cs atoms occupy a single adsorption site at T3 on the Si(0 0 1) surface. The height of Cs atoms adsorbed at T3 site is 3:18 ± 0:05 Å from the second layer of Si(0 0 1)(2 × 1) surface. The saturation coverage estimated from the measured CAICISS intensity ratio and the proposed atomic structure is found to be 0:46 × 0:06 ML.

Original language	English
Pages (from-to)	83-88
Number of pages	6
Journal	Current Applied Physics
Volume	3
Issue number	1
DOIs	https://doi.org/10.1016/S1567-1739(02)00241-9
State	Published - Feb 2003

Keywords

Cesium
Low energy ion scattering
Silicon
Surface structure

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10.1016/S1567-1739(02)00241-9

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@article{62adb716bee9430d85256a3d300f5628,

title = "Atomic structure of Cs grown on Si(001)(2 × 1) surface by coaxial impact collision ion scattering spectroscopy",

abstract = "The atomic structure and the saturation coverage of Cs on the Si(0 0 1)(2 × 1) surface at room temperature have been studied by coaxial impact collision ion scattering spectroscopy (CAICISS). For the atomic structure of saturated Cs/Si(0 0 1)(2 -xt 1) surface, it is found that Cs atoms occupy a single adsorption site at T3 on the Si(0 0 1) surface. The height of Cs atoms adsorbed at T3 site is 3:18 ± 0:05 {\AA} from the second layer of Si(0 0 1)(2 × 1) surface. The saturation coverage estimated from the measured CAICISS intensity ratio and the proposed atomic structure is found to be 0:46 × 0:06 ML.",

keywords = "Cesium, Low energy ion scattering, Silicon, Surface structure",

author = "Kim, \{J. Y.\} and Park, \{J. Y.\} and Seo, \{J. H.\} and Whang, \{C. N.\} and Kim, \{S. S.\} and Choi, \{D. S.\} and Kang, \{H. J.\} and Chae, \{K. H.\}",

year = "2003",

month = feb,

doi = "10.1016/S1567-1739(02)00241-9",

language = "English",

volume = "3",

pages = "83--88",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Atomic structure of Cs grown on Si(001)(2 × 1) surface by coaxial impact collision ion scattering spectroscopy

AU - Kim, J. Y.

AU - Park, J. Y.

AU - Seo, J. H.

AU - Whang, C. N.

AU - Kim, S. S.

AU - Choi, D. S.

AU - Kang, H. J.

AU - Chae, K. H.

PY - 2003/2

Y1 - 2003/2

N2 - The atomic structure and the saturation coverage of Cs on the Si(0 0 1)(2 × 1) surface at room temperature have been studied by coaxial impact collision ion scattering spectroscopy (CAICISS). For the atomic structure of saturated Cs/Si(0 0 1)(2 -xt 1) surface, it is found that Cs atoms occupy a single adsorption site at T3 on the Si(0 0 1) surface. The height of Cs atoms adsorbed at T3 site is 3:18 ± 0:05 Å from the second layer of Si(0 0 1)(2 × 1) surface. The saturation coverage estimated from the measured CAICISS intensity ratio and the proposed atomic structure is found to be 0:46 × 0:06 ML.

AB - The atomic structure and the saturation coverage of Cs on the Si(0 0 1)(2 × 1) surface at room temperature have been studied by coaxial impact collision ion scattering spectroscopy (CAICISS). For the atomic structure of saturated Cs/Si(0 0 1)(2 -xt 1) surface, it is found that Cs atoms occupy a single adsorption site at T3 on the Si(0 0 1) surface. The height of Cs atoms adsorbed at T3 site is 3:18 ± 0:05 Å from the second layer of Si(0 0 1)(2 × 1) surface. The saturation coverage estimated from the measured CAICISS intensity ratio and the proposed atomic structure is found to be 0:46 × 0:06 ML.

KW - Cesium

KW - Low energy ion scattering

KW - Silicon

KW - Surface structure

UR - https://www.scopus.com/pages/publications/0037319416

U2 - 10.1016/S1567-1739(02)00241-9

DO - 10.1016/S1567-1739(02)00241-9

M3 - Article

AN - SCOPUS:0037319416

SN - 1567-1739

VL - 3

SP - 83

EP - 88

JO - Current Applied Physics

JF - Current Applied Physics

IS - 1

ER -

Atomic structure of Cs grown on Si(001)(2 × 1) surface by coaxial impact collision ion scattering spectroscopy

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Keywords

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