Atomic structure of Cs layer grown on Si(0 0 1)(2 × 1) surface at room temperature

J. Y. Kim; J. Y. Park; J. H. Seo; C. N. Whang; H. J. Kang; S. S. Kim; D. S. Choi; K. H. Chae

doi:10.1016/S0039-6028(03)00378-9

Atomic structure of Cs layer grown on Si(0 0 1)(2 × 1) surface at room temperature

J. Y. Kim, J. Y. Park, J. H. Seo, C. N. Whang, H. J. Kang, S. S. Kim, D. S. Choi, K. H. Chae

Department of Physics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The atomic structure of Cs layer grown on Si(0 0 1)(2×1) surface at room temperature was investigated by using coaxial impact collision ion scattering spectroscopy. The Cs atoms was found to occupy a single absorption site with a height of 3.18±0.05 Å from the second layer of Si(0 0 1) surface. The results showed that the bond length between Cs and the nearest Si atoms was 3.71 ± 0.05 Å.

Original language	English
Pages (from-to)	L340-L346
Journal	Surface Science
Volume	531
Issue number	1
DOIs	https://doi.org/10.1016/S0039-6028(03)00378-9
State	Published - 10 May 2003

Keywords

Alkali metals
Low energy ion scattering (LEIS)
Silicon
Surface structure, morphology, roughness, and topography

Access to Document

10.1016/S0039-6028(03)00378-9

Cite this

@article{481de505a0bb4af28b15b7a027c05719,

title = "Atomic structure of Cs layer grown on Si(0 0 1)(2 × 1) surface at room temperature",

abstract = "The atomic structure of Cs layer grown on Si(0 0 1)(2×1) surface at room temperature was investigated by using coaxial impact collision ion scattering spectroscopy. The Cs atoms was found to occupy a single absorption site with a height of 3.18±0.05 {\AA} from the second layer of Si(0 0 1) surface. The results showed that the bond length between Cs and the nearest Si atoms was 3.71 ± 0.05 {\AA}.",

keywords = "Alkali metals, Low energy ion scattering (LEIS), Silicon, Surface structure, morphology, roughness, and topography",

author = "Kim, {J. Y.} and Park, {J. Y.} and Seo, {J. H.} and Whang, {C. N.} and Kang, {H. J.} and Kim, {S. S.} and Choi, {D. S.} and Chae, {K. H.}",

year = "2003",

month = may,

day = "10",

doi = "10.1016/S0039-6028(03)00378-9",

language = "English",

volume = "531",

pages = "L340--L346",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Atomic structure of Cs layer grown on Si(0 0 1)(2 × 1) surface at room temperature

AU - Kim, J. Y.

AU - Park, J. Y.

AU - Seo, J. H.

AU - Whang, C. N.

AU - Kang, H. J.

AU - Kim, S. S.

AU - Choi, D. S.

AU - Chae, K. H.

PY - 2003/5/10

Y1 - 2003/5/10

N2 - The atomic structure of Cs layer grown on Si(0 0 1)(2×1) surface at room temperature was investigated by using coaxial impact collision ion scattering spectroscopy. The Cs atoms was found to occupy a single absorption site with a height of 3.18±0.05 Å from the second layer of Si(0 0 1) surface. The results showed that the bond length between Cs and the nearest Si atoms was 3.71 ± 0.05 Å.

AB - The atomic structure of Cs layer grown on Si(0 0 1)(2×1) surface at room temperature was investigated by using coaxial impact collision ion scattering spectroscopy. The Cs atoms was found to occupy a single absorption site with a height of 3.18±0.05 Å from the second layer of Si(0 0 1) surface. The results showed that the bond length between Cs and the nearest Si atoms was 3.71 ± 0.05 Å.

KW - Alkali metals

KW - Low energy ion scattering (LEIS)

KW - Silicon

KW - Surface structure, morphology, roughness, and topography

UR - http://www.scopus.com/inward/record.url?scp=0037431531&partnerID=8YFLogxK

U2 - 10.1016/S0039-6028(03)00378-9

DO - 10.1016/S0039-6028(03)00378-9

M3 - Article

AN - SCOPUS:0037431531

SN - 0039-6028

VL - 531

SP - L340-L346

JO - Surface Science

JF - Surface Science

IS - 1

ER -

Atomic structure of Cs layer grown on Si(0 0 1)(2 × 1) surface at room temperature

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this