Atomic structure of Cs layer grown on Si(0 0 1)(2 × 1) surface at room temperature

J. Y. Kim; J. Y. Park; J. H. Seo; C. N. Whang; H. J. Kang; S. S. Kim; D. S. Choi; K. H. Chae

doi:10.1016/S0039-6028(03)00378-9

Atomic structure of Cs layer grown on Si(0 0 1)(2 × 1) surface at room temperature

J. Y. Kim
, J. Y. Park
, J. H. Seo
, C. N. Whang
, H. J. Kang
, S. S. Kim
, D. S. Choi
, K. H. Chae

Department of Physics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The atomic structure of Cs layer grown on Si(0 0 1)(2×1) surface at room temperature was investigated by using coaxial impact collision ion scattering spectroscopy. The Cs atoms was found to occupy a single absorption site with a height of 3.18±0.05 Å from the second layer of Si(0 0 1) surface. The results showed that the bond length between Cs and the nearest Si atoms was 3.71 ± 0.05 Å.

Original language	English
Pages (from-to)	L340-L346
Journal	Surface Science
Volume	531
Issue number	1
DOIs	https://doi.org/10.1016/S0039-6028(03)00378-9
State	Published - 10 May 2003

Keywords

Alkali metals
Low energy ion scattering (LEIS)
Silicon
Surface structure, morphology, roughness, and topography

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10.1016/S0039-6028(03)00378-9

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@article{481de505a0bb4af28b15b7a027c05719,

title = "Atomic structure of Cs layer grown on Si(0 0 1)(2 × 1) surface at room temperature",

abstract = "The atomic structure of Cs layer grown on Si(0 0 1)(2×1) surface at room temperature was investigated by using coaxial impact collision ion scattering spectroscopy. The Cs atoms was found to occupy a single absorption site with a height of 3.18±0.05 {\AA} from the second layer of Si(0 0 1) surface. The results showed that the bond length between Cs and the nearest Si atoms was 3.71 ± 0.05 {\AA}.",

keywords = "Alkali metals, Low energy ion scattering (LEIS), Silicon, Surface structure, morphology, roughness, and topography",

author = "Kim, \{J. Y.\} and Park, \{J. Y.\} and Seo, \{J. H.\} and Whang, \{C. N.\} and Kang, \{H. J.\} and Kim, \{S. S.\} and Choi, \{D. S.\} and Chae, \{K. H.\}",

year = "2003",

month = may,

day = "10",

doi = "10.1016/S0039-6028(03)00378-9",

language = "English",

volume = "531",

pages = "L340--L346",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Atomic structure of Cs layer grown on Si(0 0 1)(2 × 1) surface at room temperature

AU - Kim, J. Y.

AU - Park, J. Y.

AU - Seo, J. H.

AU - Whang, C. N.

AU - Kang, H. J.

AU - Kim, S. S.

AU - Choi, D. S.

AU - Chae, K. H.

PY - 2003/5/10

Y1 - 2003/5/10

N2 - The atomic structure of Cs layer grown on Si(0 0 1)(2×1) surface at room temperature was investigated by using coaxial impact collision ion scattering spectroscopy. The Cs atoms was found to occupy a single absorption site with a height of 3.18±0.05 Å from the second layer of Si(0 0 1) surface. The results showed that the bond length between Cs and the nearest Si atoms was 3.71 ± 0.05 Å.

AB - The atomic structure of Cs layer grown on Si(0 0 1)(2×1) surface at room temperature was investigated by using coaxial impact collision ion scattering spectroscopy. The Cs atoms was found to occupy a single absorption site with a height of 3.18±0.05 Å from the second layer of Si(0 0 1) surface. The results showed that the bond length between Cs and the nearest Si atoms was 3.71 ± 0.05 Å.

KW - Alkali metals

KW - Low energy ion scattering (LEIS)

KW - Silicon

KW - Surface structure, morphology, roughness, and topography

UR - https://www.scopus.com/pages/publications/0037431531

U2 - 10.1016/S0039-6028(03)00378-9

DO - 10.1016/S0039-6028(03)00378-9

M3 - Article

AN - SCOPUS:0037431531

SN - 0039-6028

VL - 531

SP - L340-L346

JO - Surface Science

JF - Surface Science

IS - 1

ER -

Atomic structure of Cs layer grown on Si(0 0 1)(2 × 1) surface at room temperature

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Keywords

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