Atomically thin PdS2: physical characteristics and electronic device applications

Hyeon Seung Jo, Guen Hyung Oh, Sang il Kim, Tae wan Kim

Research output: Contribution to journalArticlepeer-review


This paper details the fabrication and characterization of field-effect transistors (FETs) and photodetector devices based on few-layered palladium disulfide (PdS2) films. PdS2 is an emerging member of the transition metal dichalcogenide family that has not been extensively studied. In this study, we evaluated various characteristics of PdS2 by fabricating FET devices and measured the contact resistance using the transmission line method to be 114 MΩ ∙ μm. We evaluated the electron transport properties of the fabricated FETs to confirm their n-type behavior and measured their capacitance–voltage (C–V) curves. The field-effect mobility of the few-layered PdS2 FETs fabricated through transmission line patterning was investigated at room temperature (300 K) and found to be 2.85 cm2 V−1 s−1.

Original languageEnglish
Pages (from-to)751-755
Number of pages5
JournalJournal of the Korean Physical Society
Issue number10
StatePublished - Nov 2023


  • C-V curve
  • Field-effect transistor (FET)
  • PdS
  • Transfer curve
  • Transmission line method (TLM)


Dive into the research topics of 'Atomically thin PdS2: physical characteristics and electronic device applications'. Together they form a unique fingerprint.

Cite this