Barrier properties and failure mechanism of Ta-Si-N thin films for Cu interconnection

Yoon Jik Lee; Bong Seok Suh; Myoung Seok Kwon; Chong Ook Park

doi:10.1063/1.369172

Barrier properties and failure mechanism of Ta-Si-N thin films for Cu interconnection

Yoon Jik Lee, Bong Seok Suh, Myoung Seok Kwon, Chong Ook Park

Department of Materials Science and Engineering

Korea Advanced Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

74 Scopus citations

Abstract

Cosputtered Ta-Si-N amorphous films of ten different compositions were investigated as a barrier material for Cu interconnection. The films of relatively low nitrogen content (<47 at. %) undergo an abrupt failure with the formation of tantalum silicides and copper silicide between Si and Cu during annealing. Ta₄₃Si₄N₅₃ thin film is readily crystallized into TaN_x in spite of a remarkable chemical stability with Cu. The films containing nitrogen more than 51 at. % are sacrificial barriers which show the formation of Cu₃Si phase at Ta-Si-N/Cu interface even before the films crystallize to form tantalum silicide. According to electrical tests, the barriers which show the sacrificial characteristics are most effective and show no electrical degradation even after annealing at 500°C for an hour in Si/Cu and 525°C for an hour in SiO₂/Cu metallization.

Original language	English
Pages (from-to)	1927-1934
Number of pages	8
Journal	Journal of Applied Physics
Volume	85
Issue number	3
DOIs	https://doi.org/10.1063/1.369172
State	Published - Feb 1999

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abstract = "Cosputtered Ta-Si-N amorphous films of ten different compositions were investigated as a barrier material for Cu interconnection. The films of relatively low nitrogen content (<47 at. %) undergo an abrupt failure with the formation of tantalum silicides and copper silicide between Si and Cu during annealing. Ta43Si4N53 thin film is readily crystallized into TaNx in spite of a remarkable chemical stability with Cu. The films containing nitrogen more than 51 at. % are sacrificial barriers which show the formation of Cu3Si phase at Ta-Si-N/Cu interface even before the films crystallize to form tantalum silicide. According to electrical tests, the barriers which show the sacrificial characteristics are most effective and show no electrical degradation even after annealing at 500°C for an hour in Si/Cu and 525°C for an hour in SiO2/Cu metallization.",

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AB - Cosputtered Ta-Si-N amorphous films of ten different compositions were investigated as a barrier material for Cu interconnection. The films of relatively low nitrogen content (<47 at. %) undergo an abrupt failure with the formation of tantalum silicides and copper silicide between Si and Cu during annealing. Ta43Si4N53 thin film is readily crystallized into TaNx in spite of a remarkable chemical stability with Cu. The films containing nitrogen more than 51 at. % are sacrificial barriers which show the formation of Cu3Si phase at Ta-Si-N/Cu interface even before the films crystallize to form tantalum silicide. According to electrical tests, the barriers which show the sacrificial characteristics are most effective and show no electrical degradation even after annealing at 500°C for an hour in Si/Cu and 525°C for an hour in SiO2/Cu metallization.

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Barrier properties and failure mechanism of Ta-Si-N thin films for Cu interconnection

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