Basic solutions for nanoparticle contamination in EUV-lithography

H. Fissan, C. Asbach, J. H. Kim, S. J. Yook, D. Y.H. Pui, T. Van Der Zwaag, T. Engelke

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


Nanoparticle contamination is one of the major challenges for the semiconductor industry. Due to the continuously decreasing structure sizes, the diameters of the particles to be controlled are steadily decreasing. With the introduction of the Extreme Ultraviolet Lithography (EUVL), even particles as small as 30 nm can do harm to the very valuable EUVL-masks during operation in scanners at low pressure (50 mtorr or below) as well as during shipping and storage of the reticles in dedicated containers at atmospheric pressure. This paper focuses on the protection of EUVL photomasks from particle contamination. We present models and experiments to describe the nanoparticle contamination control under atmospheric and low pressure conditions.

Original languageEnglish
Pages (from-to)11-14
Number of pages4
Issue number1920
StatePublished - 2005


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