Basic solutions for nanoparticle contamination in EUV-lithography

H. Fissan; C. Asbach; J. H. Kim; S. J. Yook; D. Y.H. Pui; T. Van Der Zwaag; T. Engelke

Basic solutions for nanoparticle contamination in EUV-lithography

H. Fissan, C. Asbach, J. H. Kim, S. J. Yook, D. Y.H. Pui, T. Van Der Zwaag, T. Engelke

Department of Chemical Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Nanoparticle contamination is one of the major challenges for the semiconductor industry. Due to the continuously decreasing structure sizes, the diameters of the particles to be controlled are steadily decreasing. With the introduction of the Extreme Ultraviolet Lithography (EUVL), even particles as small as 30 nm can do harm to the very valuable EUVL-masks during operation in scanners at low pressure (50 mtorr or below) as well as during shipping and storage of the reticles in dedicated containers at atmospheric pressure. This paper focuses on the protection of EUVL photomasks from particle contamination. We present models and experiments to describe the nanoparticle contamination control under atmospheric and low pressure conditions.

Original language	English
Pages (from-to)	11-14
Number of pages	4
Journal	VDI-Berichte
Issue number	1920
State	Published - 2005

Cite this

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title = "Basic solutions for nanoparticle contamination in EUV-lithography",

abstract = "Nanoparticle contamination is one of the major challenges for the semiconductor industry. Due to the continuously decreasing structure sizes, the diameters of the particles to be controlled are steadily decreasing. With the introduction of the Extreme Ultraviolet Lithography (EUVL), even particles as small as 30 nm can do harm to the very valuable EUVL-masks during operation in scanners at low pressure (50 mtorr or below) as well as during shipping and storage of the reticles in dedicated containers at atmospheric pressure. This paper focuses on the protection of EUVL photomasks from particle contamination. We present models and experiments to describe the nanoparticle contamination control under atmospheric and low pressure conditions.",

author = "H. Fissan and C. Asbach and Kim, {J. H.} and Yook, {S. J.} and Pui, {D. Y.H.} and {Van Der Zwaag}, T. and T. Engelke",

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AU - Fissan, H.

AU - Asbach, C.

AU - Kim, J. H.

AU - Yook, S. J.

AU - Pui, D. Y.H.

AU - Van Der Zwaag, T.

AU - Engelke, T.

PY - 2005

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AB - Nanoparticle contamination is one of the major challenges for the semiconductor industry. Due to the continuously decreasing structure sizes, the diameters of the particles to be controlled are steadily decreasing. With the introduction of the Extreme Ultraviolet Lithography (EUVL), even particles as small as 30 nm can do harm to the very valuable EUVL-masks during operation in scanners at low pressure (50 mtorr or below) as well as during shipping and storage of the reticles in dedicated containers at atmospheric pressure. This paper focuses on the protection of EUVL photomasks from particle contamination. We present models and experiments to describe the nanoparticle contamination control under atmospheric and low pressure conditions.

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M3 - Article

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SN - 0083-5560

SP - 11

EP - 14

JO - VDI-Berichte

JF - VDI-Berichte

IS - 1920

ER -

Basic solutions for nanoparticle contamination in EUV-lithography

Abstract

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