Abstract
Bias stress effect in pentacene organic thin-flim transistors with cross-linked PVA gate dielectric is analyzed. For negative gate bias stress, positive threshold voltage shift is observed. The injected charges from the gate electrode to the defect states of gate dielectric are regarded as the main origin of VT shift. The reduced bias stress effect using SiO 2 blocking layer confirms the assumed mechanism. It is also demonstrated that the inverter with SiO2 blocking layer shows the negligible hysteresis owing to the reduced bias stress effect.
Original language | English |
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Pages (from-to) | 445-448 |
Number of pages | 4 |
Journal | Proceedings of International Meeting on Information Display |
Volume | 2006 |
State | Published - 2006 |
Event | IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference - Daegu, Korea, Republic of Duration: 22 Aug 2006 → 25 Aug 2006 |