Bias stress effect in organic thin-film transistors with cross-linked PVA gate dielectric and its reduction method using SiO2 blocking layer

Dong Wook Park, Cheon An Lee, Keum Dong Jung, Byung Gook Park, Jong Duk Lee

Research output: Contribution to journalConference articlepeer-review

Abstract

Bias stress effect in pentacene organic thin-flim transistors with cross-linked PVA gate dielectric is analyzed. For negative gate bias stress, positive threshold voltage shift is observed. The injected charges from the gate electrode to the defect states of gate dielectric are regarded as the main origin of VT shift. The reduced bias stress effect using SiO 2 blocking layer confirms the assumed mechanism. It is also demonstrated that the inverter with SiO2 blocking layer shows the negligible hysteresis owing to the reduced bias stress effect.

Original languageEnglish
Pages (from-to)445-448
Number of pages4
JournalProceedings of International Meeting on Information Display
Volume2006
StatePublished - 2006
EventIMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference - Daegu, Korea, Republic of
Duration: 22 Aug 200625 Aug 2006

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