(Bi,La)4Ti3O12 as a ferroelectric layer and SrTa 2O6 as a buffer layer for metal-ferroelectric-metal- insulator-semiconductorfield-effect transistor

Joo Nam Kim; Yun Soo Choi; Byung Eun Park

doi:10.2109/jcersj2.117.1032

(Bi,La)4Ti₃O₁₂ as a ferroelectric layer and SrTa ₂O₆ as a buffer layer for metal-ferroelectric-metal- insulator-semiconductorfield-effect transistor

Joo Nam Kim, Yun Soo Choi, Byung Eun Park

University of Seoul

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The metal-ferroelectric-metal-insulator-semiconductor field-effect transistor (MFMIS-FET) using the (Bi,La)₄Ti₃O₁₂ (BLT) as a ferroelectric and SrTa₂O₆ (STA) as a buffer layer is prepared. The Au/STA/Si structure shows about 1 nF/cm² of the accu-mulation capacitance value which is equivalent to about 6.2 nm of SiO_2. The leakage current density is lower than 10⁷ A/cm²under 5 V. The remanent polarization of the 420 nm-thick BLT film was 35.2 μC/cm² at 450 kV/cm. The MFMIS-FET was fabricated with different area ratio (AI/AF) from 1 to 8. From the drain current-gate voltage characteristics at the drain volt-age of 0.2 V, the memory window is only 0.5 V for the device with AI/AF = 1 but it is increased to 1.8 V as the AI/AF is increased to 8. For the AI/AF ratio of 8, the "on" state of the drain current of 1.12 × 10^-5 A rapidly drops after 10 ⁵ s to 2 × 10^-6 A andthe "off" state current increase from 10^-7 A to 10^-6 A after 10 ⁵ s. The on/off current ratio decrease from 3 × 102 to 8.

Original language	English
Pages (from-to)	1032-1034
Number of pages	3
Journal	Journal of the Ceramic Society of Japan
Volume	117
Issue number	1369
DOIs	https://doi.org/10.2109/jcersj2.117.1032
State	Published - Sep 2009

Keywords

(Bi,La)TiO
Feram
Mfmis structure
Retention time
SrTa o

Access to Document

10.2109/jcersj2.117.1032

Cite this

@article{b7c1a948b0b343e68692e706764e16b8,

title = "(Bi,La)4Ti3O12 as a ferroelectric layer and SrTa 2O6 as a buffer layer for metal-ferroelectric-metal- insulator-semiconductorfield-effect transistor",

abstract = "The metal-ferroelectric-metal-insulator-semiconductor field-effect transistor (MFMIS-FET) using the (Bi,La)4Ti3O12 (BLT) as a ferroelectric and SrTa2O6 (STA) as a buffer layer is prepared. The Au/STA/Si structure shows about 1 nF/cm2 of the accu-mulation capacitance value which is equivalent to about 6.2 nm of SiO2. The leakage current density is lower than 107 A/cm2under 5 V. The remanent polarization of the 420 nm-thick BLT film was 35.2 μC/cm2 at 450 kV/cm. The MFMIS-FET was fabricated with different area ratio (AI/AF) from 1 to 8. From the drain current-gate voltage characteristics at the drain volt-age of 0.2 V, the memory window is only 0.5 V for the device with AI/AF = 1 but it is increased to 1.8 V as the AI/AF is increased to 8. For the AI/AF ratio of 8, the {"}on{"} state of the drain current of 1.12 × 10-5 A rapidly drops after 10 5 s to 2 × 10-6 A andthe {"}off{"} state current increase from 10-7 A to 10-6 A after 10 5 s. The on/off current ratio decrease from 3 × 102 to 8.",

keywords = "(Bi,La)TiO, Feram, Mfmis structure, Retention time, SrTa o",

author = "Kim, {Joo Nam} and Choi, {Yun Soo} and Park, {Byung Eun}",

year = "2009",

month = sep,

doi = "10.2109/jcersj2.117.1032",

language = "English",

volume = "117",

pages = "1032--1034",

journal = "Journal of the Ceramic Society of Japan",

issn = "1882-0743",

publisher = "Ceramic Society of Japan",

number = "1369",

}

TY - JOUR

T1 - (Bi,La)4Ti3O12 as a ferroelectric layer and SrTa 2O6 as a buffer layer for metal-ferroelectric-metal- insulator-semiconductorfield-effect transistor

AU - Kim, Joo Nam

AU - Choi, Yun Soo

AU - Park, Byung Eun

PY - 2009/9

Y1 - 2009/9

N2 - The metal-ferroelectric-metal-insulator-semiconductor field-effect transistor (MFMIS-FET) using the (Bi,La)4Ti3O12 (BLT) as a ferroelectric and SrTa2O6 (STA) as a buffer layer is prepared. The Au/STA/Si structure shows about 1 nF/cm2 of the accu-mulation capacitance value which is equivalent to about 6.2 nm of SiO2. The leakage current density is lower than 107 A/cm2under 5 V. The remanent polarization of the 420 nm-thick BLT film was 35.2 μC/cm2 at 450 kV/cm. The MFMIS-FET was fabricated with different area ratio (AI/AF) from 1 to 8. From the drain current-gate voltage characteristics at the drain volt-age of 0.2 V, the memory window is only 0.5 V for the device with AI/AF = 1 but it is increased to 1.8 V as the AI/AF is increased to 8. For the AI/AF ratio of 8, the "on" state of the drain current of 1.12 × 10-5 A rapidly drops after 10 5 s to 2 × 10-6 A andthe "off" state current increase from 10-7 A to 10-6 A after 10 5 s. The on/off current ratio decrease from 3 × 102 to 8.

AB - The metal-ferroelectric-metal-insulator-semiconductor field-effect transistor (MFMIS-FET) using the (Bi,La)4Ti3O12 (BLT) as a ferroelectric and SrTa2O6 (STA) as a buffer layer is prepared. The Au/STA/Si structure shows about 1 nF/cm2 of the accu-mulation capacitance value which is equivalent to about 6.2 nm of SiO2. The leakage current density is lower than 107 A/cm2under 5 V. The remanent polarization of the 420 nm-thick BLT film was 35.2 μC/cm2 at 450 kV/cm. The MFMIS-FET was fabricated with different area ratio (AI/AF) from 1 to 8. From the drain current-gate voltage characteristics at the drain volt-age of 0.2 V, the memory window is only 0.5 V for the device with AI/AF = 1 but it is increased to 1.8 V as the AI/AF is increased to 8. For the AI/AF ratio of 8, the "on" state of the drain current of 1.12 × 10-5 A rapidly drops after 10 5 s to 2 × 10-6 A andthe "off" state current increase from 10-7 A to 10-6 A after 10 5 s. The on/off current ratio decrease from 3 × 102 to 8.

KW - (Bi,La)TiO

KW - Feram

KW - Mfmis structure

KW - Retention time

KW - SrTa o

UR - http://www.scopus.com/inward/record.url?scp=70349168702&partnerID=8YFLogxK

U2 - 10.2109/jcersj2.117.1032

DO - 10.2109/jcersj2.117.1032

M3 - Article

AN - SCOPUS:70349168702

SN - 1882-0743

VL - 117

SP - 1032

EP - 1034

JO - Journal of the Ceramic Society of Japan

JF - Journal of the Ceramic Society of Japan

IS - 1369

ER -

(Bi,La)4Ti₃O₁₂ as a ferroelectric layer and SrTa ₂O₆ as a buffer layer for metal-ferroelectric-metal- insulator-semiconductorfield-effect transistor

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this