@inproceedings{d931aa44c74b438ba9d3e40b90950a69,
title = "Bitline separated gated multi-bit (BS-GMB) SONOS for high density flash memory",
abstract = "A novel bitline separated gated multi-bit (BS-GMB) SONOS memory for high density flash memory is newly introduced. Bitline separation method can decrease the number of gate contacts, and simplify the gate contact interconnection. 2N memory nodes with single crystalline silicon channel can be realized in 8F 2 size with this structure.",
author = "Shim, {Won Bo} and Seunghyun Kim and Yoon Kim and Park, {Se Hwan} and Sungjun Kim and Euyhwan Park and Park, {Byung Gook}",
year = "2012",
doi = "10.1109/NANO.2012.6322053",
language = "English",
isbn = "9781467321983",
series = "Proceedings of the IEEE Conference on Nanotechnology",
booktitle = "2012 12th IEEE International Conference on Nanotechnology, NANO 2012",
note = "2012 12th IEEE International Conference on Nanotechnology, NANO 2012 ; Conference date: 20-08-2012 Through 23-08-2012",
}