TY - JOUR
T1 - Boron nitride nanotubes (BNNTs) decorated Pd-ternary alloy (Pd63·2Ni34·3Co2.5) for H2 sensing
AU - Yoo, Soo Min
AU - Sharma, Bharat
AU - Kim, Jung Sik
N1 - Publisher Copyright:
© 2020 Hydrogen Energy Publications LLC
PY - 2021/3/26
Y1 - 2021/3/26
N2 - The micro-electro-mechanical system (MEMS)-based field effect transistor (FET) sensor for hydrogen detection was fabricated by modifying the gate electrode with boron nitride nanotubes (BNNTs) decorated Pd-ternary alloy (Pd63·2Ni34·3Co2.5) as a hydrogen sensing layer Electro-thermal properties of the micro-heater embedded under sensor membrane were analyzed by a finite element method (FEM) simulation. The structural and morphological properties of the gate electrode were studied by Raman spectroscopy, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and field emission scanning electron microscopy (FESEM). A variation in gate potential is observed due to the H2 atmosphere that leads to the variation in the depletion region, therefore, changing the current in the channel (BNNTs decorated Pd-ternary alloy). The BNNTs-decorated Pd ternary alloy displayed high sensing response, fast response and recovery time for H2 gas, low power consumption, long-term stability, and wide detection range from 1 to 5000 ppm H2. The drain current of the H2 FET sensor varied significantly at hydrogen gas exposure and increased with H2 concentration. As proposed H2 FET sensor can be utilized to the H2 leak detection system for safe applications.
AB - The micro-electro-mechanical system (MEMS)-based field effect transistor (FET) sensor for hydrogen detection was fabricated by modifying the gate electrode with boron nitride nanotubes (BNNTs) decorated Pd-ternary alloy (Pd63·2Ni34·3Co2.5) as a hydrogen sensing layer Electro-thermal properties of the micro-heater embedded under sensor membrane were analyzed by a finite element method (FEM) simulation. The structural and morphological properties of the gate electrode were studied by Raman spectroscopy, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and field emission scanning electron microscopy (FESEM). A variation in gate potential is observed due to the H2 atmosphere that leads to the variation in the depletion region, therefore, changing the current in the channel (BNNTs decorated Pd-ternary alloy). The BNNTs-decorated Pd ternary alloy displayed high sensing response, fast response and recovery time for H2 gas, low power consumption, long-term stability, and wide detection range from 1 to 5000 ppm H2. The drain current of the H2 FET sensor varied significantly at hydrogen gas exposure and increased with H2 concentration. As proposed H2 FET sensor can be utilized to the H2 leak detection system for safe applications.
KW - Boron nitride nanotubes
KW - FET gas sensor
KW - Hydrogen
KW - MEMS process
KW - PdNiCo ternary alloy
UR - http://www.scopus.com/inward/record.url?scp=85083317447&partnerID=8YFLogxK
U2 - 10.1016/j.ijhydene.2020.03.216
DO - 10.1016/j.ijhydene.2020.03.216
M3 - Article
AN - SCOPUS:85083317447
SN - 0360-3199
VL - 46
SP - 12263
EP - 12270
JO - International Journal of Hydrogen Energy
JF - International Journal of Hydrogen Energy
IS - 22
ER -