Abstract
The charge transfer dynamics regarding an intimate contact between graphene and single-stranded deoxyribonucleic acid (ssDNA) is investigated from DC to the THz-regime. A graphene field-effect transistor (G-FET) is immersed in ssDNA solutions where the adsorption of ssDNA is controlled in terms of absolute coverage. DC-response of the G-FET is recorded and cross-validated by observing changes in Raman spectroscopy and further investigating THz-time domain spectroscopy using a nano-slot antenna. We find very good agreement between electrical and optical approaches where the Fermi level of the ssDNA-adsorbed graphene depends on the coverage nonlinearly. The results point towards a new doping method with sub-nanoscale patterning precision on graphene and its electronic applications based on electronic junction properties.
Original language | English |
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Pages (from-to) | 525-531 |
Number of pages | 7 |
Journal | Carbon |
Volume | 130 |
DOIs | |
State | Published - Apr 2018 |
Keywords
- DNA
- Fermi level
- G-FET
- Graphene
- Terahertz