BSIM-CMG Modeling for 3D NAND Cell with Macaroni Channel

Minsoo Kim, Ilho Myeong, Juhyun Kim, Myounggon Kang, Jongwook Jeon, Hyungcheol Shin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

In this paper, we developed a BSIM-CMG compact model for read operation of 3D NAND string and verified the model through the result of TCAD simulation. First we extracted the parameters for a NAND unit cell with macaroni channel. For the purpose of accuracy, we extracted the parameters in 3 steps and took the effects of each step (mobility degradation factor, short channel effects and so on) into account. Then by connecting the modeled cells, we verified string characteristics such as gm variation along with the position of the selected cell and the coupling effect between neighboring word-lines and the floating node of the selected cell. This study would offer the convenience when modeling the program/erase operations.

Original languageEnglish
Title of host publication2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages288-290
Number of pages3
ISBN (Electronic)9781538665084
DOIs
StatePublished - Mar 2019
Event2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore
Duration: 12 Mar 201915 Mar 2019

Publication series

Name2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Country/TerritorySingapore
CitySingapore
Period12/03/1915/03/19

Keywords

  • 3D NAND Flash
  • BSIM-CMG
  • Compact modeling
  • macaroni channel
  • TCAD

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