Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors

J. H. Seo; D. S. Park; S. W. Cho; C. Y. Kim; W. C. Jang; C. N. Whang; K. H. Yoo; G. S. Chang; T. Pedersen; A. Moewes; K. H. Chae; S. J. Cho

doi:10.1063/1.2363940

Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors

J. H. Seo, D. S. Park, S. W. Cho, C. Y. Kim, W. C. Jang, C. N. Whang, K. H. Yoo, G. S. Chang, T. Pedersen, A. Moewes, K. H. Chae, S. J. Cho

Department of Physics

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52 Scopus citations

Abstract

The structural and electrical properties of organic thin-film transistors with rubrene/pentacene and pentacene/rubrene bilayered structures were investigated using x-ray diffraction, atomic force microscopy, and x-ray emission spectroscopy. High-quality rubrene thin films with orthorhombic structure were obtained in the rubrene/pentacene bilayer while the pentacene/rubrene bilayer only had an amorphous rubrene phase present. The rubrene/pentacene thin-film transistor shows more desirable current-voltage characteristics compared to the pentacene/rubrene transistor. The overall results suggest that the presence of a chemically active organic buffer layer and its associated crystal structure are crucial in enhancing the structural and electrical properties of rubrene-based transistors.

Original language	English
Article number	163505
Journal	Applied Physics Letters
Volume	89
Issue number	16
DOIs	https://doi.org/10.1063/1.2363940
State	Published - 2006

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title = "Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors",

abstract = "The structural and electrical properties of organic thin-film transistors with rubrene/pentacene and pentacene/rubrene bilayered structures were investigated using x-ray diffraction, atomic force microscopy, and x-ray emission spectroscopy. High-quality rubrene thin films with orthorhombic structure were obtained in the rubrene/pentacene bilayer while the pentacene/rubrene bilayer only had an amorphous rubrene phase present. The rubrene/pentacene thin-film transistor shows more desirable current-voltage characteristics compared to the pentacene/rubrene transistor. The overall results suggest that the presence of a chemically active organic buffer layer and its associated crystal structure are crucial in enhancing the structural and electrical properties of rubrene-based transistors.",

author = "Seo, {J. H.} and Park, {D. S.} and Cho, {S. W.} and Kim, {C. Y.} and Jang, {W. C.} and Whang, {C. N.} and Yoo, {K. H.} and Chang, {G. S.} and T. Pedersen and A. Moewes and Chae, {K. H.} and Cho, {S. J.}",

year = "2006",

doi = "10.1063/1.2363940",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors

AU - Seo, J. H.

AU - Park, D. S.

AU - Cho, S. W.

AU - Kim, C. Y.

AU - Jang, W. C.

AU - Whang, C. N.

AU - Yoo, K. H.

AU - Chang, G. S.

AU - Pedersen, T.

AU - Moewes, A.

AU - Chae, K. H.

AU - Cho, S. J.

PY - 2006

Y1 - 2006

N2 - The structural and electrical properties of organic thin-film transistors with rubrene/pentacene and pentacene/rubrene bilayered structures were investigated using x-ray diffraction, atomic force microscopy, and x-ray emission spectroscopy. High-quality rubrene thin films with orthorhombic structure were obtained in the rubrene/pentacene bilayer while the pentacene/rubrene bilayer only had an amorphous rubrene phase present. The rubrene/pentacene thin-film transistor shows more desirable current-voltage characteristics compared to the pentacene/rubrene transistor. The overall results suggest that the presence of a chemically active organic buffer layer and its associated crystal structure are crucial in enhancing the structural and electrical properties of rubrene-based transistors.

AB - The structural and electrical properties of organic thin-film transistors with rubrene/pentacene and pentacene/rubrene bilayered structures were investigated using x-ray diffraction, atomic force microscopy, and x-ray emission spectroscopy. High-quality rubrene thin films with orthorhombic structure were obtained in the rubrene/pentacene bilayer while the pentacene/rubrene bilayer only had an amorphous rubrene phase present. The rubrene/pentacene thin-film transistor shows more desirable current-voltage characteristics compared to the pentacene/rubrene transistor. The overall results suggest that the presence of a chemically active organic buffer layer and its associated crystal structure are crucial in enhancing the structural and electrical properties of rubrene-based transistors.

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U2 - 10.1063/1.2363940

DO - 10.1063/1.2363940

M3 - Article

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VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 163505

ER -

Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors

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