Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors

J. H. Seo; D. S. Park; S. W. Cho; C. Y. Kim; W. C. Jang; C. N. Whang; K. H. Yoo; G. S. Chang; T. Pedersen; A. Moewes; K. H. Chae; S. J. Cho

doi:10.1063/1.2363940

Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors

J. H. Seo
, D. S. Park
, S. W. Cho
, C. Y. Kim
, W. C. Jang
, C. N. Whang
, K. H. Yoo
, G. S. Chang
, T. Pedersen
, A. Moewes
, K. H. Chae
, S. J. Cho

Department of Physics

Yonsei University
University of Saskatchewan
Korea Institute of Science and Technology
Kyungsung University

Research output: Contribution to journal › Article › peer-review

53 Scopus citations

Abstract

The structural and electrical properties of organic thin-film transistors with rubrene/pentacene and pentacene/rubrene bilayered structures were investigated using x-ray diffraction, atomic force microscopy, and x-ray emission spectroscopy. High-quality rubrene thin films with orthorhombic structure were obtained in the rubrene/pentacene bilayer while the pentacene/rubrene bilayer only had an amorphous rubrene phase present. The rubrene/pentacene thin-film transistor shows more desirable current-voltage characteristics compared to the pentacene/rubrene transistor. The overall results suggest that the presence of a chemically active organic buffer layer and its associated crystal structure are crucial in enhancing the structural and electrical properties of rubrene-based transistors.

Original language	English
Article number	163505
Journal	Applied Physics Letters
Volume	89
Issue number	16
DOIs	https://doi.org/10.1063/1.2363940
State	Published - 2006

Access to Document

10.1063/1.2363940

Cite this

@article{e95a314443bc4338b13343a12986ea7d,

title = "Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors",

abstract = "The structural and electrical properties of organic thin-film transistors with rubrene/pentacene and pentacene/rubrene bilayered structures were investigated using x-ray diffraction, atomic force microscopy, and x-ray emission spectroscopy. High-quality rubrene thin films with orthorhombic structure were obtained in the rubrene/pentacene bilayer while the pentacene/rubrene bilayer only had an amorphous rubrene phase present. The rubrene/pentacene thin-film transistor shows more desirable current-voltage characteristics compared to the pentacene/rubrene transistor. The overall results suggest that the presence of a chemically active organic buffer layer and its associated crystal structure are crucial in enhancing the structural and electrical properties of rubrene-based transistors.",

author = "Seo, \{J. H.\} and Park, \{D. S.\} and Cho, \{S. W.\} and Kim, \{C. Y.\} and Jang, \{W. C.\} and Whang, \{C. N.\} and Yoo, \{K. H.\} and Chang, \{G. S.\} and T. Pedersen and A. Moewes and Chae, \{K. H.\} and Cho, \{S. J.\}",

year = "2006",

doi = "10.1063/1.2363940",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "16",

}

TY - JOUR

T1 - Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors

AU - Seo, J. H.

AU - Park, D. S.

AU - Cho, S. W.

AU - Kim, C. Y.

AU - Jang, W. C.

AU - Whang, C. N.

AU - Yoo, K. H.

AU - Chang, G. S.

AU - Pedersen, T.

AU - Moewes, A.

AU - Chae, K. H.

AU - Cho, S. J.

PY - 2006

Y1 - 2006

N2 - The structural and electrical properties of organic thin-film transistors with rubrene/pentacene and pentacene/rubrene bilayered structures were investigated using x-ray diffraction, atomic force microscopy, and x-ray emission spectroscopy. High-quality rubrene thin films with orthorhombic structure were obtained in the rubrene/pentacene bilayer while the pentacene/rubrene bilayer only had an amorphous rubrene phase present. The rubrene/pentacene thin-film transistor shows more desirable current-voltage characteristics compared to the pentacene/rubrene transistor. The overall results suggest that the presence of a chemically active organic buffer layer and its associated crystal structure are crucial in enhancing the structural and electrical properties of rubrene-based transistors.

AB - The structural and electrical properties of organic thin-film transistors with rubrene/pentacene and pentacene/rubrene bilayered structures were investigated using x-ray diffraction, atomic force microscopy, and x-ray emission spectroscopy. High-quality rubrene thin films with orthorhombic structure were obtained in the rubrene/pentacene bilayer while the pentacene/rubrene bilayer only had an amorphous rubrene phase present. The rubrene/pentacene thin-film transistor shows more desirable current-voltage characteristics compared to the pentacene/rubrene transistor. The overall results suggest that the presence of a chemically active organic buffer layer and its associated crystal structure are crucial in enhancing the structural and electrical properties of rubrene-based transistors.

UR - https://www.scopus.com/pages/publications/33750162037

U2 - 10.1063/1.2363940

DO - 10.1063/1.2363940

M3 - Article

AN - SCOPUS:33750162037

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 163505

ER -

Buffer layer effect on the structural and electrical properties of rubrene-based organic thin-film transistors

Abstract

Access to Document

Other files and links

Fingerprint

Cite this