Carrier dynamics and defects in MOVPE-grown bulk InGaAs layers with metamorphic InGaAs and InGaPSb buffer layers for solar cells

Yongkun Sin; Stephen D. LaLumondiere; Brendan J. Foran; William T. Lotshaw; Steven C. Moss; Tae Wan Kim; Peter Dudley; Jeremy Kirch; Steven Ruder; Luke J. Mawst; Thomas F. Kuech

doi:10.1117/12.906424

Carrier dynamics and defects in MOVPE-grown bulk InGaAs layers with metamorphic InGaAs and InGaPSb buffer layers for solar cells

Yongkun Sin, Stephen D. LaLumondiere, Brendan J. Foran, William T. Lotshaw, Steven C. Moss, Tae Wan Kim, Peter Dudley, Jeremy Kirch, Steven Ruder, Luke J. Mawst, Thomas F. Kuech

School of Advanced Fusion Studies

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Bulk InGaAs layers with a 1eV band-gap grown on GaAs substrates are attractive for high efficiency multi-junction solar cells. However, a large amount of lattice mismatch between bulk InGaAs layer and GaAs substrate necessitates development of novel metamorphic buffer layers (MBL). A number of research groups have reported various MBLs for applications including HBTs, HEMTs, lasers, and solar cells. In this study, we report carrier dynamics and defects in MOVPE-grown bulk InGaAs layers (E _g= ∼ 1.0 - 1.1 eV at 300K) with two different types of MBLs including InGaAs and InGaPSb. We also report the effect of chemical-mechanical polishing (CMP) process on carrier lifetimes and the properties of the films subsequently grown on top of the MBL. We employed time-resolved photoluminescence (TR-PL) techniques to study carrier dynamics in In _xGa _1-xAs samples with and without the CMP process and a high resolution TEM to study defects in various structures.

Original language	English
Title of host publication	Physics and Simulation of Optoelectronic Devices XX
DOIs	https://doi.org/10.1117/12.906424
State	Published - 2012
Event	Physics and Simulation of Optoelectronic Devices XX - San Francisco, CA, United States Duration: 23 Jan 2012 → 26 Jan 2012

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8255
ISSN (Print)	0277-786X

Conference

Conference	Physics and Simulation of Optoelectronic Devices XX
Country/Territory	United States
City	San Francisco, CA
Period	23/01/12 → 26/01/12

Keywords

Carrier dynamics
Defects
MOVPE
Metamorphic buffer layers
Solar cells
TEM
TR-PL

Access to Document

10.1117/12.906424

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Sin, Y., LaLumondiere, S. D., Foran, B. J., Lotshaw, W. T., Moss, S. C., Kim, T. W., Dudley, P., Kirch, J., Ruder, S., Mawst, L. J., & Kuech, T. F. (2012). Carrier dynamics and defects in MOVPE-grown bulk InGaAs layers with metamorphic InGaAs and InGaPSb buffer layers for solar cells. In Physics and Simulation of Optoelectronic Devices XX Article 825516 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8255). https://doi.org/10.1117/12.906424

@inproceedings{69375a2e9a384f9d92a1ed8f5703d6d0,

title = "Carrier dynamics and defects in MOVPE-grown bulk InGaAs layers with metamorphic InGaAs and InGaPSb buffer layers for solar cells",

abstract = "Bulk InGaAs layers with a 1eV band-gap grown on GaAs substrates are attractive for high efficiency multi-junction solar cells. However, a large amount of lattice mismatch between bulk InGaAs layer and GaAs substrate necessitates development of novel metamorphic buffer layers (MBL). A number of research groups have reported various MBLs for applications including HBTs, HEMTs, lasers, and solar cells. In this study, we report carrier dynamics and defects in MOVPE-grown bulk InGaAs layers (E g= ∼ 1.0 - 1.1 eV at 300K) with two different types of MBLs including InGaAs and InGaPSb. We also report the effect of chemical-mechanical polishing (CMP) process on carrier lifetimes and the properties of the films subsequently grown on top of the MBL. We employed time-resolved photoluminescence (TR-PL) techniques to study carrier dynamics in In xGa 1-xAs samples with and without the CMP process and a high resolution TEM to study defects in various structures.",

keywords = "Carrier dynamics, Defects, MOVPE, Metamorphic buffer layers, Solar cells, TEM, TR-PL",

author = "Yongkun Sin and LaLumondiere, {Stephen D.} and Foran, {Brendan J.} and Lotshaw, {William T.} and Moss, {Steven C.} and Kim, {Tae Wan} and Peter Dudley and Jeremy Kirch and Steven Ruder and Mawst, {Luke J.} and Kuech, {Thomas F.}",

year = "2012",

doi = "10.1117/12.906424",

language = "English",

isbn = "9780819488985",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Physics and Simulation of Optoelectronic Devices XX",

note = "Physics and Simulation of Optoelectronic Devices XX ; Conference date: 23-01-2012 Through 26-01-2012",

}

Sin, Y, LaLumondiere, SD, Foran, BJ, Lotshaw, WT, Moss, SC, Kim, TW, Dudley, P, Kirch, J, Ruder, S, Mawst, LJ & Kuech, TF 2012, Carrier dynamics and defects in MOVPE-grown bulk InGaAs layers with metamorphic InGaAs and InGaPSb buffer layers for solar cells. in Physics and Simulation of Optoelectronic Devices XX., 825516, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8255, Physics and Simulation of Optoelectronic Devices XX, San Francisco, CA, United States, 23/01/12. https://doi.org/10.1117/12.906424

Carrier dynamics and defects in MOVPE-grown bulk InGaAs layers with metamorphic InGaAs and InGaPSb buffer layers for solar cells. / Sin, Yongkun; LaLumondiere, Stephen D.; Foran, Brendan J. et al.
Physics and Simulation of Optoelectronic Devices XX. 2012. 825516 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8255).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Carrier dynamics and defects in MOVPE-grown bulk InGaAs layers with metamorphic InGaAs and InGaPSb buffer layers for solar cells

AU - Sin, Yongkun

AU - LaLumondiere, Stephen D.

AU - Foran, Brendan J.

AU - Lotshaw, William T.

AU - Moss, Steven C.

AU - Kim, Tae Wan

AU - Dudley, Peter

AU - Kirch, Jeremy

AU - Ruder, Steven

AU - Mawst, Luke J.

AU - Kuech, Thomas F.

PY - 2012

Y1 - 2012

N2 - Bulk InGaAs layers with a 1eV band-gap grown on GaAs substrates are attractive for high efficiency multi-junction solar cells. However, a large amount of lattice mismatch between bulk InGaAs layer and GaAs substrate necessitates development of novel metamorphic buffer layers (MBL). A number of research groups have reported various MBLs for applications including HBTs, HEMTs, lasers, and solar cells. In this study, we report carrier dynamics and defects in MOVPE-grown bulk InGaAs layers (E g= ∼ 1.0 - 1.1 eV at 300K) with two different types of MBLs including InGaAs and InGaPSb. We also report the effect of chemical-mechanical polishing (CMP) process on carrier lifetimes and the properties of the films subsequently grown on top of the MBL. We employed time-resolved photoluminescence (TR-PL) techniques to study carrier dynamics in In xGa 1-xAs samples with and without the CMP process and a high resolution TEM to study defects in various structures.

AB - Bulk InGaAs layers with a 1eV band-gap grown on GaAs substrates are attractive for high efficiency multi-junction solar cells. However, a large amount of lattice mismatch between bulk InGaAs layer and GaAs substrate necessitates development of novel metamorphic buffer layers (MBL). A number of research groups have reported various MBLs for applications including HBTs, HEMTs, lasers, and solar cells. In this study, we report carrier dynamics and defects in MOVPE-grown bulk InGaAs layers (E g= ∼ 1.0 - 1.1 eV at 300K) with two different types of MBLs including InGaAs and InGaPSb. We also report the effect of chemical-mechanical polishing (CMP) process on carrier lifetimes and the properties of the films subsequently grown on top of the MBL. We employed time-resolved photoluminescence (TR-PL) techniques to study carrier dynamics in In xGa 1-xAs samples with and without the CMP process and a high resolution TEM to study defects in various structures.

KW - Carrier dynamics

KW - Defects

KW - MOVPE

KW - Metamorphic buffer layers

KW - Solar cells

KW - TEM

KW - TR-PL

UR - http://www.scopus.com/inward/record.url?scp=84859997849&partnerID=8YFLogxK

U2 - 10.1117/12.906424

DO - 10.1117/12.906424

M3 - Conference contribution

AN - SCOPUS:84859997849

SN - 9780819488985

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Physics and Simulation of Optoelectronic Devices XX

T2 - Physics and Simulation of Optoelectronic Devices XX

Y2 - 23 January 2012 through 26 January 2012

ER -

Carrier dynamics and defects in MOVPE-grown bulk InGaAs layers with metamorphic InGaAs and InGaPSb buffer layers for solar cells

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Keywords

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