Carrier dynamics and defects in MOVPE-grown bulk InGaAs layers with metamorphic InGaAs and InGaPSb buffer layers for solar cells

Yongkun Sin; Stephen D. LaLumondiere; Brendan J. Foran; William T. Lotshaw; Steven C. Moss; Tae Wan Kim; Peter Dudley; Jeremy Kirch; Steven Ruder; Luke J. Mawst; Thomas F. Kuech

doi:10.1117/12.906424

Carrier dynamics and defects in MOVPE-grown bulk InGaAs layers with metamorphic InGaAs and InGaPSb buffer layers for solar cells

Yongkun Sin
, Stephen D. LaLumondiere
, Brendan J. Foran
, William T. Lotshaw
, Steven C. Moss
, Tae Wan Kim
, Peter Dudley
, Jeremy Kirch
, Steven Ruder
, Luke J. Mawst
, Thomas F. Kuech

School of Advanced Fusion Studies

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Bulk InGaAs layers with a 1eV band-gap grown on GaAs substrates are attractive for high efficiency multi-junction solar cells. However, a large amount of lattice mismatch between bulk InGaAs layer and GaAs substrate necessitates development of novel metamorphic buffer layers (MBL). A number of research groups have reported various MBLs for applications including HBTs, HEMTs, lasers, and solar cells. In this study, we report carrier dynamics and defects in MOVPE-grown bulk InGaAs layers (E _g= ∼ 1.0 - 1.1 eV at 300K) with two different types of MBLs including InGaAs and InGaPSb. We also report the effect of chemical-mechanical polishing (CMP) process on carrier lifetimes and the properties of the films subsequently grown on top of the MBL. We employed time-resolved photoluminescence (TR-PL) techniques to study carrier dynamics in In _xGa _1-xAs samples with and without the CMP process and a high resolution TEM to study defects in various structures.

Original language	English
Title of host publication	Physics and Simulation of Optoelectronic Devices XX
DOIs	https://doi.org/10.1117/12.906424
State	Published - 2012
Event	Physics and Simulation of Optoelectronic Devices XX - San Francisco, CA, United States Duration: 23 Jan 2012 → 26 Jan 2012

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8255
ISSN (Print)	0277-786X

Conference

Conference	Physics and Simulation of Optoelectronic Devices XX
Country/Territory	United States
City	San Francisco, CA
Period	23/01/12 → 26/01/12

Keywords

Carrier dynamics
Defects
MOVPE
Metamorphic buffer layers
Solar cells
TEM
TR-PL

Access to Document

10.1117/12.906424

Cite this

Sin, Y., LaLumondiere, S. D., Foran, B. J., Lotshaw, W. T., Moss, S. C., Kim, T. W., Dudley, P., Kirch, J., Ruder, S., Mawst, L. J., & Kuech, T. F. (2012). Carrier dynamics and defects in MOVPE-grown bulk InGaAs layers with metamorphic InGaAs and InGaPSb buffer layers for solar cells. In Physics and Simulation of Optoelectronic Devices XX Article 825516 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8255). https://doi.org/10.1117/12.906424

@inproceedings{69375a2e9a384f9d92a1ed8f5703d6d0,

title = "Carrier dynamics and defects in MOVPE-grown bulk InGaAs layers with metamorphic InGaAs and InGaPSb buffer layers for solar cells",

abstract = "Bulk InGaAs layers with a 1eV band-gap grown on GaAs substrates are attractive for high efficiency multi-junction solar cells. However, a large amount of lattice mismatch between bulk InGaAs layer and GaAs substrate necessitates development of novel metamorphic buffer layers (MBL). A number of research groups have reported various MBLs for applications including HBTs, HEMTs, lasers, and solar cells. In this study, we report carrier dynamics and defects in MOVPE-grown bulk InGaAs layers (E g= ∼ 1.0 - 1.1 eV at 300K) with two different types of MBLs including InGaAs and InGaPSb. We also report the effect of chemical-mechanical polishing (CMP) process on carrier lifetimes and the properties of the films subsequently grown on top of the MBL. We employed time-resolved photoluminescence (TR-PL) techniques to study carrier dynamics in In xGa 1-xAs samples with and without the CMP process and a high resolution TEM to study defects in various structures.",

keywords = "Carrier dynamics, Defects, MOVPE, Metamorphic buffer layers, Solar cells, TEM, TR-PL",

author = "Yongkun Sin and LaLumondiere, \{Stephen D.\} and Foran, \{Brendan J.\} and Lotshaw, \{William T.\} and Moss, \{Steven C.\} and Kim, \{Tae Wan\} and Peter Dudley and Jeremy Kirch and Steven Ruder and Mawst, \{Luke J.\} and Kuech, \{Thomas F.\}",

year = "2012",

doi = "10.1117/12.906424",

language = "English",

isbn = "9780819488985",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Physics and Simulation of Optoelectronic Devices XX",

note = "Physics and Simulation of Optoelectronic Devices XX ; Conference date: 23-01-2012 Through 26-01-2012",

}

Sin, Y, LaLumondiere, SD, Foran, BJ, Lotshaw, WT, Moss, SC, Kim, TW, Dudley, P, Kirch, J, Ruder, S, Mawst, LJ & Kuech, TF 2012, Carrier dynamics and defects in MOVPE-grown bulk InGaAs layers with metamorphic InGaAs and InGaPSb buffer layers for solar cells. in Physics and Simulation of Optoelectronic Devices XX., 825516, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8255, Physics and Simulation of Optoelectronic Devices XX, San Francisco, CA, United States, 23/01/12. https://doi.org/10.1117/12.906424

Carrier dynamics and defects in MOVPE-grown bulk InGaAs layers with metamorphic InGaAs and InGaPSb buffer layers for solar cells. / Sin, Yongkun; LaLumondiere, Stephen D.; Foran, Brendan J. et al.
Physics and Simulation of Optoelectronic Devices XX. 2012. 825516 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8255).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Carrier dynamics and defects in MOVPE-grown bulk InGaAs layers with metamorphic InGaAs and InGaPSb buffer layers for solar cells

AU - Sin, Yongkun

AU - LaLumondiere, Stephen D.

AU - Foran, Brendan J.

AU - Lotshaw, William T.

AU - Moss, Steven C.

AU - Kim, Tae Wan

AU - Dudley, Peter

AU - Kirch, Jeremy

AU - Ruder, Steven

AU - Mawst, Luke J.

AU - Kuech, Thomas F.

PY - 2012

Y1 - 2012

N2 - Bulk InGaAs layers with a 1eV band-gap grown on GaAs substrates are attractive for high efficiency multi-junction solar cells. However, a large amount of lattice mismatch between bulk InGaAs layer and GaAs substrate necessitates development of novel metamorphic buffer layers (MBL). A number of research groups have reported various MBLs for applications including HBTs, HEMTs, lasers, and solar cells. In this study, we report carrier dynamics and defects in MOVPE-grown bulk InGaAs layers (E g= ∼ 1.0 - 1.1 eV at 300K) with two different types of MBLs including InGaAs and InGaPSb. We also report the effect of chemical-mechanical polishing (CMP) process on carrier lifetimes and the properties of the films subsequently grown on top of the MBL. We employed time-resolved photoluminescence (TR-PL) techniques to study carrier dynamics in In xGa 1-xAs samples with and without the CMP process and a high resolution TEM to study defects in various structures.

AB - Bulk InGaAs layers with a 1eV band-gap grown on GaAs substrates are attractive for high efficiency multi-junction solar cells. However, a large amount of lattice mismatch between bulk InGaAs layer and GaAs substrate necessitates development of novel metamorphic buffer layers (MBL). A number of research groups have reported various MBLs for applications including HBTs, HEMTs, lasers, and solar cells. In this study, we report carrier dynamics and defects in MOVPE-grown bulk InGaAs layers (E g= ∼ 1.0 - 1.1 eV at 300K) with two different types of MBLs including InGaAs and InGaPSb. We also report the effect of chemical-mechanical polishing (CMP) process on carrier lifetimes and the properties of the films subsequently grown on top of the MBL. We employed time-resolved photoluminescence (TR-PL) techniques to study carrier dynamics in In xGa 1-xAs samples with and without the CMP process and a high resolution TEM to study defects in various structures.

KW - Carrier dynamics

KW - Defects

KW - MOVPE

KW - Metamorphic buffer layers

KW - Solar cells

KW - TEM

KW - TR-PL

UR - https://www.scopus.com/pages/publications/84859997849

U2 - 10.1117/12.906424

DO - 10.1117/12.906424

M3 - Conference contribution

AN - SCOPUS:84859997849

SN - 9780819488985

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Physics and Simulation of Optoelectronic Devices XX

T2 - Physics and Simulation of Optoelectronic Devices XX

Y2 - 23 January 2012 through 26 January 2012

ER -

Carrier dynamics and defects in MOVPE-grown bulk InGaAs layers with metamorphic InGaAs and InGaPSb buffer layers for solar cells

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Keywords

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