Catalytic chemical vapor deposition technology for low temperature processing of thin film transistors

For bendable and wearable device applications, it is necessary to ensure a sufficiently low processing temperature, usually one that is lower than the glass transition temperature of ordinary plastic sheets. Catalytic chemical vapor deposition technique (Cat-CVD) has been known for its versatility and advantages such as a fast film growth rate and a high efficiency of gas utilization. These assets, combined with the absence of the atomic-scale damage caused by the bombardment of the charged particles, make this method attractive to applications in low temperature processing of the thin film transistors. In this review, film growth behavior in the catalytic chemical deposition process is discussed, and recent studies, including a surface pre-treatment, on applications to thin film transistors aire surveyed.