Channel-Stacked NAND Flash Memory with High-κ Charge Trapping Layer for High Scalability
- Joo Yun Seo
- , Yoon Kim
- , Sang Ho Lee
- , Daewoong Kwon
- , Hee Do Na
- , Hyun Chul Sohn
- , Jong Ho Lee
- , Byung Gook Park
- Samsung
- University of California at Berkeley
- Yonsei University
- Seoul National University
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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citations