Abstract
A model of characteristic length for a macaroni MOSFET is introduced for the first time by deriving the two-dimensional Poisson's equation. By using the model of characteristic length describing the potential distribution, we presented the advantage of the thinner silicon channel structure in the sub-threshold region. The models of inner potential and surface potential are compared to the results from simulations and an agreement are observed. The models are useful for deriving sub-threshold characteristics and also for device design.
Original language | English |
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Article number | 8845996 |
Pages (from-to) | 1720-1723 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 40 |
Issue number | 11 |
DOIs | |
State | Published - Nov 2019 |
Keywords
- Characteristic length
- flash memory
- macaroni structure
- natural length
- Poisson's equation