Characteristics of Au/SBT/LZO/Si MFIS structure forferroelectric-gate field-effect transistors

Jong Hyun Im, Byung Eun Park

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


Non-volatile memories using ferroelectric-gate field-effect transistors (Fe-FETs) with metal/ferroelectric/semiconductor gate stack (MFS-FETs) have superior advantages such as non-destructive read operation and high density. However, the interfacial reactions between ferroelectric materials and Si substrates make it difficult to obtain good electrical properties of MFS-FETs. As an alternative solution, Fe-FETs with a metal/ferroelectric/insulator/ insulator/semiconductor gate stack (MFIS-FETs) have been proposed. We prepared SrBi2Ta2O9 (SBT) film as a ferroelectric layer and LaZrOx (LZO) film as the insulating buffer layer, and then fabricated the n-channel Fe-FETs with the Au/SBT/LZO/Si structure. The thickness of the LZO buffer layer and SBT film deposited by a sol-gel method were about 35 nm and 450 nm, respectively. From the electrical properties of the LZO film on Si, no hysteresis was observed in the C-V curve and the leakage current density was about 1.4 × 10-7 A/cm2 at 5 V. SBT film on the LZO/Si structure was crystallized in a polycrystalline phase with a highly preferred (115) orientation. The C-V characteristics of Au/SBT/LZO/Si structure showed a clockwise hysteresis loop and the memory window width increased as the bias voltage increased. The fabricated Fe-FETs showed typical n-channel MFIS-FETs C-V characteristics and the current on/off ratio was about 103 Also, the memory window width was about 0.7 V.

Original languageEnglish
Pages (from-to)1035-1038
Number of pages4
JournalJournal of the Ceramic Society of Japan
Issue number1369
StatePublished - Sep 2009


  • Buffer layer
  • Ferroelectric
  • Lzo
  • Mfis-fet
  • Sbt


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