Characteristics of bulk InGaAsN and InGaAsSbN materials grown by metal organic vapor phase epitaxy (MOVPE) for solar cell application

Tae Wan Kim, Toby J. Garrod, Kangho Kim, Jaejin Lee, Luke J. Mawst, T. F. Kuech, S. D. LaLumondiere, Y. Sin, W. T. Lotshaw, S. C. Moss

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Scopus citations

Abstract

Bulk, lattice-matched InGaAsSbN material has been grown by metal organic vapor phase epitaxy (MOVPE) for applications in concentrated multi-junction solar cells. By optimizing the growth conditions for high Sb and As partial pressures, we achieved background hole concentrations as low as 2 × 10 18 cm -3. After thermal annealing, the background hole concentration increased from 2×10 18 to 2 × 10 19 cm -3, although PL intensity increased by a factor of 7. We recently grew single junction (1eV) solar cells incorporating dilute-nitride materials and devices were fabricated and characterized for solar cell application. Performance characteristics of these cells without anti-reflection coating included the efficiency of 4.25% under the AM1.5 (air mass) direct illumination, V oc of 0.7 V, and a spectral response extended to longer wavelength compared with GaAs cells.

Original languageEnglish
Title of host publicationPhysics, Simulation, and Photonic Engineering of Photovoltaic Devices
DOIs
StatePublished - 2012
EventPhysics, Simulation, and Photonic Engineering of Photovoltaic Devices - San Francisco, CA, United States
Duration: 23 Jan 201226 Jan 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8256
ISSN (Print)0277-786X

Conference

ConferencePhysics, Simulation, and Photonic Engineering of Photovoltaic Devices
Country/TerritoryUnited States
CitySan Francisco, CA
Period23/01/1226/01/12

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