@inproceedings{00696bbda65144d98e0c9cf79b616334,
title = "Characteristics of bulk InGaAsN and InGaAsSbN materials grown by metal organic vapor phase epitaxy (MOVPE) for solar cell application",
abstract = "Bulk, lattice-matched InGaAsSbN material has been grown by metal organic vapor phase epitaxy (MOVPE) for applications in concentrated multi-junction solar cells. By optimizing the growth conditions for high Sb and As partial pressures, we achieved background hole concentrations as low as 2 × 10 18 cm -3. After thermal annealing, the background hole concentration increased from 2×10 18 to 2 × 10 19 cm -3, although PL intensity increased by a factor of 7. We recently grew single junction (1eV) solar cells incorporating dilute-nitride materials and devices were fabricated and characterized for solar cell application. Performance characteristics of these cells without anti-reflection coating included the efficiency of 4.25\% under the AM1.5 (air mass) direct illumination, V oc of 0.7 V, and a spectral response extended to longer wavelength compared with GaAs cells.",
author = "Kim, \{Tae Wan\} and Garrod, \{Toby J.\} and Kangho Kim and Jaejin Lee and Mawst, \{Luke J.\} and Kuech, \{T. F.\} and LaLumondiere, \{S. D.\} and Y. Sin and Lotshaw, \{W. T.\} and Moss, \{S. C.\}",
year = "2012",
doi = "10.1117/12.906961",
language = "English",
isbn = "9780819488992",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Physics, Simulation, and Photonic Engineering of Photovoltaic Devices",
note = "Physics, Simulation, and Photonic Engineering of Photovoltaic Devices ; Conference date: 23-01-2012 Through 26-01-2012",
}