Characteristics of bulk InGaAsSbN/GaAs grown by metalorganic vapor phase epitaxy (MOVPE)

T. W. Kim, T. J. Garrod, L. J. Mawst, T. F. Kuech, S. D. LaLumondiere, Y. Sin, W. T. Lotshaw, S. C. Moss

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


Bulk, lattice-matched dilute-nitride-antimonide materials were grown by metalorganic vapor phase epitaxy (MOVPE) for integration into multi-junction solar cells. Bulk nominally lattice-matched films of InGaAsN and InGaAsSbN with band gap energies in the 1-1.3 eV range are characterized for background carrier concentration and luminescent properties, two factors of importance for solar cell applications. The intrinsic carbon and free carrier (hole) concentration is found to be sensitive to the selection of the gallium metalorganic source and the gas-phase MOVPE growth conditions. Variable temperature (40-300 K) steady-state photoluminescence (PL) measurements of InGaAsSbN indicate that carrier localization occurs at low temperature, similar to that commonly observed for InGaAsN materials. Carrier lifetimes of up to ∼202 ps were obtained from double heterostructures incorporating InGaAsSbN materials using time-resolved photoluminescence (TR-PL) spectroscopy.

Original languageEnglish
Pages (from-to)163-167
Number of pages5
JournalJournal of Crystal Growth
StatePublished - 1 May 2013


  • A3. Metalorganic vapor phase epitaxy
  • B1. Antimonides
  • B1. Nitrides
  • B2. Semiconducting III-V materials
  • B3. Solar cells


Dive into the research topics of 'Characteristics of bulk InGaAsSbN/GaAs grown by metalorganic vapor phase epitaxy (MOVPE)'. Together they form a unique fingerprint.

Cite this