Characteristics of bulk InGaAsSbN/GaAs grown by metalorganic vapor phase epitaxy (MOVPE)

T. W. Kim; T. J. Garrod; L. J. Mawst; T. F. Kuech; S. D. LaLumondiere; Y. Sin; W. T. Lotshaw; S. C. Moss

doi:10.1016/j.jcrysgro.2012.06.043

Characteristics of bulk InGaAsSbN/GaAs grown by metalorganic vapor phase epitaxy (MOVPE)

T. W. Kim, T. J. Garrod, L. J. Mawst, T. F. Kuech, S. D. LaLumondiere, Y. Sin, W. T. Lotshaw, S. C. Moss

School of Advanced Fusion Studies

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Bulk, lattice-matched dilute-nitride-antimonide materials were grown by metalorganic vapor phase epitaxy (MOVPE) for integration into multi-junction solar cells. Bulk nominally lattice-matched films of InGaAsN and InGaAsSbN with band gap energies in the 1-1.3 eV range are characterized for background carrier concentration and luminescent properties, two factors of importance for solar cell applications. The intrinsic carbon and free carrier (hole) concentration is found to be sensitive to the selection of the gallium metalorganic source and the gas-phase MOVPE growth conditions. Variable temperature (40-300 K) steady-state photoluminescence (PL) measurements of InGaAsSbN indicate that carrier localization occurs at low temperature, similar to that commonly observed for InGaAsN materials. Carrier lifetimes of up to ∼202 ps were obtained from double heterostructures incorporating InGaAsSbN materials using time-resolved photoluminescence (TR-PL) spectroscopy.

Original language	English
Pages (from-to)	163-167
Number of pages	5
Journal	Journal of Crystal Growth
Volume	370
DOIs	https://doi.org/10.1016/j.jcrysgro.2012.06.043
State	Published - 1 May 2013

Keywords

A3. Metalorganic vapor phase epitaxy
B1. Antimonides
B1. Nitrides
B2. Semiconducting III-V materials
B3. Solar cells

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title = "Characteristics of bulk InGaAsSbN/GaAs grown by metalorganic vapor phase epitaxy (MOVPE)",

abstract = "Bulk, lattice-matched dilute-nitride-antimonide materials were grown by metalorganic vapor phase epitaxy (MOVPE) for integration into multi-junction solar cells. Bulk nominally lattice-matched films of InGaAsN and InGaAsSbN with band gap energies in the 1-1.3 eV range are characterized for background carrier concentration and luminescent properties, two factors of importance for solar cell applications. The intrinsic carbon and free carrier (hole) concentration is found to be sensitive to the selection of the gallium metalorganic source and the gas-phase MOVPE growth conditions. Variable temperature (40-300 K) steady-state photoluminescence (PL) measurements of InGaAsSbN indicate that carrier localization occurs at low temperature, similar to that commonly observed for InGaAsN materials. Carrier lifetimes of up to ∼202 ps were obtained from double heterostructures incorporating InGaAsSbN materials using time-resolved photoluminescence (TR-PL) spectroscopy.",

keywords = "A3. Metalorganic vapor phase epitaxy, B1. Antimonides, B1. Nitrides, B2. Semiconducting III-V materials, B3. Solar cells",

author = "Kim, {T. W.} and Garrod, {T. J.} and Mawst, {L. J.} and Kuech, {T. F.} and LaLumondiere, {S. D.} and Y. Sin and Lotshaw, {W. T.} and Moss, {S. C.}",

year = "2013",

month = may,

day = "1",

doi = "10.1016/j.jcrysgro.2012.06.043",

language = "English",

volume = "370",

pages = "163--167",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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TY - JOUR

T1 - Characteristics of bulk InGaAsSbN/GaAs grown by metalorganic vapor phase epitaxy (MOVPE)

AU - Kim, T. W.

AU - Garrod, T. J.

AU - Mawst, L. J.

AU - Kuech, T. F.

AU - LaLumondiere, S. D.

AU - Sin, Y.

AU - Lotshaw, W. T.

AU - Moss, S. C.

PY - 2013/5/1

Y1 - 2013/5/1

N2 - Bulk, lattice-matched dilute-nitride-antimonide materials were grown by metalorganic vapor phase epitaxy (MOVPE) for integration into multi-junction solar cells. Bulk nominally lattice-matched films of InGaAsN and InGaAsSbN with band gap energies in the 1-1.3 eV range are characterized for background carrier concentration and luminescent properties, two factors of importance for solar cell applications. The intrinsic carbon and free carrier (hole) concentration is found to be sensitive to the selection of the gallium metalorganic source and the gas-phase MOVPE growth conditions. Variable temperature (40-300 K) steady-state photoluminescence (PL) measurements of InGaAsSbN indicate that carrier localization occurs at low temperature, similar to that commonly observed for InGaAsN materials. Carrier lifetimes of up to ∼202 ps were obtained from double heterostructures incorporating InGaAsSbN materials using time-resolved photoluminescence (TR-PL) spectroscopy.

AB - Bulk, lattice-matched dilute-nitride-antimonide materials were grown by metalorganic vapor phase epitaxy (MOVPE) for integration into multi-junction solar cells. Bulk nominally lattice-matched films of InGaAsN and InGaAsSbN with band gap energies in the 1-1.3 eV range are characterized for background carrier concentration and luminescent properties, two factors of importance for solar cell applications. The intrinsic carbon and free carrier (hole) concentration is found to be sensitive to the selection of the gallium metalorganic source and the gas-phase MOVPE growth conditions. Variable temperature (40-300 K) steady-state photoluminescence (PL) measurements of InGaAsSbN indicate that carrier localization occurs at low temperature, similar to that commonly observed for InGaAsN materials. Carrier lifetimes of up to ∼202 ps were obtained from double heterostructures incorporating InGaAsSbN materials using time-resolved photoluminescence (TR-PL) spectroscopy.

KW - A3. Metalorganic vapor phase epitaxy

KW - B1. Antimonides

KW - B1. Nitrides

KW - B2. Semiconducting III-V materials

KW - B3. Solar cells

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U2 - 10.1016/j.jcrysgro.2012.06.043

DO - 10.1016/j.jcrysgro.2012.06.043

M3 - Article

AN - SCOPUS:84897434387

SN - 0022-0248

VL - 370

SP - 163

EP - 167

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Characteristics of bulk InGaAsSbN/GaAs grown by metalorganic vapor phase epitaxy (MOVPE)

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Keywords

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