Characteristics of bulk InGaAsSbN/GaAs grown by metalorganic vapor phase epitaxy (MOVPE)
- T. W. Kim
- , T. J. Garrod
- , L. J. Mawst
- , T. F. Kuech
- , S. D. LaLumondiere
- , Y. Sin
- , W. T. Lotshaw
- , S. C. Moss
- University of Wisconsin-Madison
- Aerospace Corporation
Research output: Contribution to journal › Article › peer-review
12
Scopus
citations