Characteristics of electrical metal contact to monolayer WSe2

Dae Hyun Jung; Sang il Kim; Tae Wan Kim

doi:10.1016/j.tsf.2020.138508

Characteristics of electrical metal contact to monolayer WSe₂

Dae Hyun Jung, Sang il Kim, Tae Wan Kim

Jeonbuk National University

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The extremely high contact resistance often observed in the interface between two-dimensional p-type transition-metal dichalcogenides and metal electrodes with a high work function, such as Ni, Au, and Pd, is usually correlated with poor device performance. Here, we report the quantitative contact resistance and the Schottky barrier height of chemical vapor deposition grown-monolayer tungsten diselenide (WSe₂)-based field-effect transistors (FETs) with Au electrodes; these values are obtained by using the transmission line method and by analyzing the low-temperature transport properties, respectively. Back-gate monolayer WSe₂ FETs with Au electrodes exhibit p-type behavior, with a mobility, on/off ratio, contact resistance, and Schottky barrier height of 0.2 cm²/V•s, 6×10⁵, 0.495 MΩ·μm, and 38 meV, respectively.

Original language	English
Article number	138508
Journal	Thin Solid Films
Volume	719
DOIs	https://doi.org/10.1016/j.tsf.2020.138508
State	Published - 1 Feb 2021

Keywords

Contact resistance
Field-effect transistor
Schottky barrier heights
Transition-metal dichalcogenides
Tungsten diselenide

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10.1016/j.tsf.2020.138508

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title = "Characteristics of electrical metal contact to monolayer WSe2",

abstract = "The extremely high contact resistance often observed in the interface between two-dimensional p-type transition-metal dichalcogenides and metal electrodes with a high work function, such as Ni, Au, and Pd, is usually correlated with poor device performance. Here, we report the quantitative contact resistance and the Schottky barrier height of chemical vapor deposition grown-monolayer tungsten diselenide (WSe2)-based field-effect transistors (FETs) with Au electrodes; these values are obtained by using the transmission line method and by analyzing the low-temperature transport properties, respectively. Back-gate monolayer WSe2 FETs with Au electrodes exhibit p-type behavior, with a mobility, on/off ratio, contact resistance, and Schottky barrier height of 0.2 cm2/V•s, 6×105, 0.495 MΩ·μm, and 38 meV, respectively.",

keywords = "Contact resistance, Field-effect transistor, Schottky barrier heights, Transition-metal dichalcogenides, Tungsten diselenide",

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AU - Jung, Dae Hyun

AU - Kim, Sang il

AU - Kim, Tae Wan

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N2 - The extremely high contact resistance often observed in the interface between two-dimensional p-type transition-metal dichalcogenides and metal electrodes with a high work function, such as Ni, Au, and Pd, is usually correlated with poor device performance. Here, we report the quantitative contact resistance and the Schottky barrier height of chemical vapor deposition grown-monolayer tungsten diselenide (WSe2)-based field-effect transistors (FETs) with Au electrodes; these values are obtained by using the transmission line method and by analyzing the low-temperature transport properties, respectively. Back-gate monolayer WSe2 FETs with Au electrodes exhibit p-type behavior, with a mobility, on/off ratio, contact resistance, and Schottky barrier height of 0.2 cm2/V•s, 6×105, 0.495 MΩ·μm, and 38 meV, respectively.

AB - The extremely high contact resistance often observed in the interface between two-dimensional p-type transition-metal dichalcogenides and metal electrodes with a high work function, such as Ni, Au, and Pd, is usually correlated with poor device performance. Here, we report the quantitative contact resistance and the Schottky barrier height of chemical vapor deposition grown-monolayer tungsten diselenide (WSe2)-based field-effect transistors (FETs) with Au electrodes; these values are obtained by using the transmission line method and by analyzing the low-temperature transport properties, respectively. Back-gate monolayer WSe2 FETs with Au electrodes exhibit p-type behavior, with a mobility, on/off ratio, contact resistance, and Schottky barrier height of 0.2 cm2/V•s, 6×105, 0.495 MΩ·μm, and 38 meV, respectively.

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Characteristics of electrical metal contact to monolayer WSe₂

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Keywords

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