Characteristics of electrical metal contact to monolayer WSe2

Dae Hyun Jung, Sang il Kim, Tae Wan Kim

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8 Scopus citations


The extremely high contact resistance often observed in the interface between two-dimensional p-type transition-metal dichalcogenides and metal electrodes with a high work function, such as Ni, Au, and Pd, is usually correlated with poor device performance. Here, we report the quantitative contact resistance and the Schottky barrier height of chemical vapor deposition grown-monolayer tungsten diselenide (WSe2)-based field-effect transistors (FETs) with Au electrodes; these values are obtained by using the transmission line method and by analyzing the low-temperature transport properties, respectively. Back-gate monolayer WSe2 FETs with Au electrodes exhibit p-type behavior, with a mobility, on/off ratio, contact resistance, and Schottky barrier height of 0.2 cm2/V•s, 6×105, 0.495 MΩ·μm, and 38 meV, respectively.

Original languageEnglish
Article number138508
JournalThin Solid Films
StatePublished - 1 Feb 2021


  • Contact resistance
  • Field-effect transistor
  • Schottky barrier heights
  • Transition-metal dichalcogenides
  • Tungsten diselenide


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