Characteristics of low temperature SiN x films deposited by using highly diluted silane in nitrogen

Kil Sun No, Ki Su Keum, Wan Shick Hong

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


We report on electrical and mechanical properties of silicon nitride (SiN x) films deposited by a plasma enhanced chemical vapor deposition (PECVD) method at 200°C from SiH 4 highly diluted in N 2. The films were also prepared from SiH 4 diluted in He for comparison. The N 2 dilution was also effective in improving adhesion of the SiN x films, fascilitating construction of thin film transistors (TFTs). Metalinsulator- semiconductor (MIS) and Metal-insulator- Metal (MIM) structures were used for capacitance-voltage (C-V) and current-voltage (I-V) measurements, respectively. The resistivity and breakdown field strength of the SiN x films from N 2-diluted SiH 4 were estimated to be 1×10 13ω · cm, 7.4 MV/cm, respectively. The MIS device showed a hysteresis window and a flat band voltage shift of 3 V and 0.5 V, respectively. The TFTs fabricated by using these films showed a field-effect mobility of 0.16 cm 2/Vs, a threshold voltage of 3 V, a subthreshold slope of 1.2 V/dec, and an on/off ratio of >10 6.

Original languageEnglish
Pages (from-to)613-618
Number of pages6
JournalJournal of Korean Institute of Metals and Materials
Issue number8
StatePublished - Aug 2012


  • Conductivity/ resistivity
  • Dielectrics
  • Electrical properties
  • Highly-diluted gas
  • Lowtemperature
  • Silicon nitride
  • TFT
  • Vapor deposition


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