TY - GEN
T1 - Characteristics of OTFTs based on α - ω - Dihexyl- sexithiophene(DH6T) using organic molecular beam deposition
AU - Han, Dae Hee
AU - Park, Byung Eun
PY - 2011
Y1 - 2011
N2 - We fabricated an organic thin film transistor using organic semiconductor material α- ω- Dihexyl-sexithiophene (DH6T). The organic semiconductor was deposited using organic molecular beam deposition (OMBD). The deposition rate was 0.3Å/s and the final thickness was 100 nm. After deposition, we annealed at 40°C, 60°C, 80°C. In present, DH6T was used as a p-type semiconductor, so we measured 0V∼-40V. We measured drain current versus drain voltage, drain current versus gate voltage, calculated mobility and On/Off ratio at 40°C, 60°C, 80°C. The field-effect mobility was 8×10- 3, 9×10- 3, 1.2×10- 2, and on/off ratio was 1.75×10- 2, 1.85×10- 2, 2.17×10- 2, respectively.
AB - We fabricated an organic thin film transistor using organic semiconductor material α- ω- Dihexyl-sexithiophene (DH6T). The organic semiconductor was deposited using organic molecular beam deposition (OMBD). The deposition rate was 0.3Å/s and the final thickness was 100 nm. After deposition, we annealed at 40°C, 60°C, 80°C. In present, DH6T was used as a p-type semiconductor, so we measured 0V∼-40V. We measured drain current versus drain voltage, drain current versus gate voltage, calculated mobility and On/Off ratio at 40°C, 60°C, 80°C. The field-effect mobility was 8×10- 3, 9×10- 3, 1.2×10- 2, and on/off ratio was 1.75×10- 2, 1.85×10- 2, 2.17×10- 2, respectively.
KW - Organic \molecular beam deposition
KW - Organic thin film transistors(OTFTs)
KW - α- ω- Dihexyl-sexithiophene (DH6T)
UR - http://www.scopus.com/inward/record.url?scp=84855473076&partnerID=8YFLogxK
U2 - 10.1063/1.3666647
DO - 10.1063/1.3666647
M3 - Conference contribution
AN - SCOPUS:84855473076
SN - 9780735410022
T3 - AIP Conference Proceedings
SP - 859
EP - 860
BT - Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
T2 - 30th International Conference on the Physics of Semiconductors, ICPS-30
Y2 - 25 July 2010 through 30 July 2010
ER -