Characteristics of P3HT:PCBM bilayer middle-contact transistors incorporating a conjugated polyelectrolyte layer

Gil Jo Chae, Jung Hwa Seo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report the fabrication and characterization of solution-processed organic bilayer field effect transistors with a middle-contact configuration. P3HT and PCBM were chosen for a hole and electron transporting material, respectively. The P3HT:PCBM bilayer FET with a middle contact structure showed only p-type behavior with a hole mobility (μh) of ~ 10 -3 cm2 V-1 s-1, which is a different result compared to the conventional top-contact ambipolar device. Electron injection was enabled by using a thin CPE layer beneath the PCBM layer. The thickness of the CPE layer is critical for achieving balanced hole and electron mobilities and provides an important variable for consideration in future optimization studies. More detailed mechanisms on the role of CPE layer and the middle-contact structure are currently under investigation.

Original languageEnglish
Title of host publicationPhysical Chemistry of Interfaces and Nanomaterials XII
DOIs
StatePublished - 2013
EventPhysical Chemistry of Interfaces and Nanomaterials XII - San Diego, CA, United States
Duration: 25 Aug 201328 Aug 2013

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8811
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferencePhysical Chemistry of Interfaces and Nanomaterials XII
Country/TerritoryUnited States
CitySan Diego, CA
Period25/08/1328/08/13

Keywords

  • Carrier mobility
  • Conjugated polyelectrolyte
  • Electron injection
  • Middle contact
  • Organic field effect transistor

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