Characteristics of Rhombohedral (3R) Structure of α-In2Se3 Nanosheets by Mechanical Exfoliation

Dong Hyun Seo, Ju Won Kim, Jin Hoo Seong, Hyo Chang Lee, Sang Il Kim, Tae Wan Kim

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


The mechanically exfoliated ultrathin 3R α-In2Se3 nanosheets were transferred onto a SiO2/Si substrate. Using atomic force microscopy, it was confirmed that the transferred α-In2Se3 transferred had a thickness of 15–120 nm. The thickness-dependence of Raman peaks of E2, A11, E4, and A12 was observed from the Raman spectra. Moreover, the measured photoluminescence peak values in the range of 869–895 nm indicate a blue shift as the thickness decreases. The field-effect transistor based on α-In2Se3 exhibited an n-type semiconductor behavior. From the transfer curve at gate voltage of 10 V, the derived values of the mobility and ON/OFF ratio are 24.26 cm2 V− 1 s− 1 and 1.84, respectively. In addition, it was confirmed that the 3R α-In2Se3 layers had a high photoresponsivity of up to approximately 34,500 A/W under illumination (λ = 750 nm). Graphical abstract: (Figure presented.)

Original languageEnglish
Pages (from-to)192-198
Number of pages7
JournalElectronic Materials Letters
Issue number2
StatePublished - Mar 2024


  • Electrical properties
  • Photoluminescence spectra
  • Photoresponsivity
  • Raman spectra
  • Rhombohedral α-InSe nanosheets


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