@inproceedings{27820cdd5f474740b45f9f64a8a18c0b,
title = "Characteristics of silicon nanocrystals embedded in the amorphous-silicon carbide films deposited by cat-CVD at low temperature for optoelectronics applications",
abstract = "Si/SiC composite films, namely, Si nanocrystals in a-SiC matrix material, were deposited by using Cat-CVD. Photoluminescence characteristics of a-SiC thin films prepared with various gas ratio R=[CH4]/[SiH4] were investigated. Fourier-transform infrared spectroscopy (FTIR) and x-ray photoelectron spectroscopy (XPS) measurements composition ratio of a-SiC films. It shows different composition ratio between R > 10 and R < 10. Photoluminescence (PL) intensity was changed before and after thermal annealing at various temperatures. The PL intensity was increased after annealing peak position was shift short wavelength range.",
author = "Hwang, {Jae Dam} and Lee, {Kyoung Min} and Lee, {Youn Jin} and Seunghun Jang and Moonsup Han and Sunghwan Won and Junghyun Sok and Kyoungwan Park and Hong, {Wan Shick}",
year = "2009",
doi = "10.1149/1.3237017",
language = "English",
isbn = "9781566777476",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "10",
pages = "105--109",
booktitle = "Nanoscale One-Dimensional Electronic and Photonic Devices 3, NODEPD 3",
address = "United States",
edition = "10",
}