Abstract
Silicon nitride (SiNx) films prepared by PECVD technique at a low temperature (200 °C). Controlling the gas mixing ratio, R = [N 2]/[SiH4], and the plasma power can be composition parameter, X, varied from 0.83 to 1.62. Photoluminescence (PL) spectra of these films revealed existence of nano-sized silicon particles.
Original language | English |
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Pages | 2251-2252 |
Number of pages | 2 |
State | Published - 2010 |
Event | 17th International Display Workshops, IDW'10 - Fukuoka, Japan Duration: 1 Dec 2010 → 3 Dec 2010 |
Conference
Conference | 17th International Display Workshops, IDW'10 |
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Country/Territory | Japan |
City | Fukuoka |
Period | 1/12/10 → 3/12/10 |