Characteristics of silicon nanocrystals embedded in the silicon nitride films deposited by PE-CVD at a low temperature

Jae Dam Hwang, Ki Su Keum, Youn Jin Lee, Kyoung Min Lee, Seunghun Jang, Moonsup Han, Wan Shick Hong

Research output: Contribution to conferencePaperpeer-review

Abstract

Silicon nitride (SiNx) films prepared by PECVD technique at a low temperature (200 °C). Controlling the gas mixing ratio, R = [N 2]/[SiH4], and the plasma power can be composition parameter, X, varied from 0.83 to 1.62. Photoluminescence (PL) spectra of these films revealed existence of nano-sized silicon particles.

Original languageEnglish
Pages2251-2252
Number of pages2
StatePublished - 2010
Event17th International Display Workshops, IDW'10 - Fukuoka, Japan
Duration: 1 Dec 20103 Dec 2010

Conference

Conference17th International Display Workshops, IDW'10
Country/TerritoryJapan
CityFukuoka
Period1/12/103/12/10

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